scholarly journals Electrical, Magnetic and Morphological Properties of E-Beam Evaporated Ni Thin Films

2016 ◽  
Vol 8 (1) ◽  
pp. 21-28 ◽  
Author(s):  
M. K. Hasan ◽  
M. N. A. Shafi ◽  
M. N. A. Siddiquy ◽  
M. A. Rahim ◽  
M. J. Islam
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Electron Beam ◽  
Silicon Substrate ◽  
Glass Substrate ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Morphological Properties ◽  
Si Substrate ◽  
Glass Substrates

Nickel (Ni) thin films in the thickness range 50?80 nm have been prepared by electron beam evaporation method at a base pressure of 4x10-5 mbar on silicon and glass substrates. Some samples have been annealed at 573 K for 1.5 h in open air. The resistivity of Ni films on silicon substrate is higher than the resistivity of Ni films on glass substrate. The TCR of Ni films is found to be positive which indicates that the Ni samples are metallic in nature. Coercivity of Ni films increases with increasing film thickness. The coercivity of 80 nm as-deposited Ni film on glass substrate is found to be ~ 9 Oe. The rms value of the surface roughness of 150 nm as-deposited Ni film on glass substrate is ~12 nm and it becomes ~ 7 nm after annealing. On the other hand, the coercivity of 90 nm and 160 nm as-deposited Ni films on silicon substrate are 50 Oe and 85 Oe, respectively. The rms value of surface roughness of 120 nm as-deposited Ni film on Si substrate is ~ 16 nm. It becomes ~ 3 nm after annealing.

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

2018 ◽  
Vol 11 (01) ◽  
pp. 1850011
Author(s):  
Lipeng Ren ◽  
Wei Wang ◽  
Chenglei Yu ◽  
Saisai Duan ◽  
Wenjing Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Electron Beam ◽  
Low Temperature ◽  
Surface Morphology ◽  
Silicon Substrate ◽  
Amorphous State ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Bilayer Structure

In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.

Microstructures of The Electron-Beam Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
D.J. Cheng ◽  
S. Yeh ◽  
G.F. Chi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Second Phase ◽  
Si Substrate ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Diffraction Patterns

AbstractPolycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.

Deposition of ZnS thin films by electron beam evaporation technique, effect of thickness on the crystallographic and optical properties

2019 ◽  
Vol 33 (04) ◽  
pp. 1950034 ◽  
Author(s):  
Bassam Abdallah ◽  
Koutayba Alnama ◽  
Fareza Nasrallah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Dielectric Constants ◽  
Glass Substrates ◽  
Xrd Patterns

Deposition of Zinc sulfide (ZnS) thin films on Si (100) and glass substrates has been performed using electron beam evaporation (EBE) method without annealing. Film structure has been analyzed by XRD, while SEM and AFM have been used to explore the films morphology. Raman spectroscopy has been used to confirm film composition. The stoichiometry has been verified by EDX and XPS techniques. XRD patterns indicated that the films possess a polycrystalline cubic structure with orientations along (111) and (220) planes. The crystallinity has been better with film thickness in the 350–1700 nm range while the RMS roughness increases. Optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy band gap of the films shows a clear reduction from 3.45 eV to 3.36 eV with increasing film thickness. The evolution of refractive index, extinction coefficient, and dielectric constants with thickness has been investigated from transmittance spectra in the 500–1000 nm wavelength range.

Effect of Different Thicknesses of ZnS Thin Films on its Optical and Structural Properties

2014 ◽  
Vol 556-562 ◽  
pp. 185-188
Author(s):  
Shu Wang Duo ◽  
Huan Ke ◽  
Ting Zhi Liu ◽  
Hao Zhang
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Glass Substrate ◽  
Band Gaps ◽  
The Other ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that different sides of glass substrate have different thicknesses of the ZnS thin films, which can affect the optical and structural properties of ZnS thin films. The ZnS films of the side of glass substrates back to the solution center are thicker than that of the other side, and the ZnS films from ZnSO4 are thicker than that from Zn (NO3)2. The transmittances lower with the thicknesses of ZnS films increasing. The band gaps exhibit blue response with the thicknesses of ZnS films increasing. From the sides of glass substrates back to the solution center, the (111) reflection of the sphalerite structure can be observed at about 2θ=29.1°, while from the other side toward the solution center showed no significant peak.

Influence of Annealing Temperature on the Properties of Nanostructure ITO Thin Films Prepared by Ion-Assisted Electron Beam Evaporation

2008 ◽  
Vol 55-57 ◽  
pp. 373-376
Author(s):  
Artorn Pokaipisit ◽  
M. Horprathum ◽  
Pichet Limsuwan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Surface Morphology ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Visible Range ◽  
Glass Substrates ◽  
Ito Thin Films

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 oC. At 350 oC, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 W-cm was obtained at a temperature of 350 oC.

Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

2015 ◽  
Vol 9 (3) ◽  
pp. 2453-2460 ◽  
Author(s):  
Reza Shakouri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Sio2 Thin Film ◽  
Al2o3 Films ◽  
Beam Technique ◽  
Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.  The packing density of the samples is studied by change in the spectrum of a coating with humidity

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