MoSe2 Thin Films and Thin-Film Transistors Prepared by Electron Beam Evaporation

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

New Journal of Chemistry ◽

10.1039/c5nj01582k ◽

2015 ◽

Vol 39 (12) ◽

pp. 9471-9479 ◽

Cited By ~ 30

Author(s):

Shrividhya Thiagarajan ◽

Mahalingam Thaiyan ◽

Ravi Ganesan

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Beam ◽

Single Phase ◽

Physical Property ◽

Electron Beam Evaporation ◽

V2o5 Thin Films ◽

Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

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Comparative study of ZnTe thin films prepared using close space sublimation (CSS) and electron beam evaporation (EBE) thin film fabrication techniques for optoelectronic applications

Materials Technology ◽

10.1179/1753555713y.0000000101 ◽

2013 ◽

Vol 29 (1) ◽

pp. 29-35 ◽

Cited By ~ 7

Author(s):

M. U. Farooq ◽

M. Khan ◽

A. Faraz ◽

A. Maqsood ◽

W. Ahmad ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Beam ◽

Comparative Study ◽

Electron Beam Evaporation ◽

Thin Film Fabrication ◽

Close Space Sublimation ◽

Film Fabrication ◽

Space Sublimation ◽

Znte Thin Films

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Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments

MRS Proceedings ◽

10.1557/proc-222-321 ◽

1991 ◽

Vol 222 ◽

Cited By ~ 1

Author(s):

Chuxin Zhou ◽

L. W. Hobbs

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Beam ◽

Electron Beam Evaporation ◽

Growth Mechanisms ◽

Depth Profiles ◽

Scanning Auger Microscopy ◽

Dominant Process ◽

Au Thin Films ◽

Auger Microscopy

ABSTRACTABSTRACT Au thin films were deposited using electron beam evaporation onto the surface of Nb metal to serve as thin film markers to study the growth mechanisms of NbS2 scales. Scanning Auger microscopy (SAM) was used to measure the depth profiles for the compositions of Au, Nb, S, Si and O across the sulfide scale. Three other marker experiments were also studied. All four marker experiments indicated that the inward diffusion of sulfur is the dominant process responsible for the growth of NbS2 scales.

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Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v9i3.1347 ◽

2015 ◽

Vol 9 (3) ◽

pp. 2453-2460 ◽

Cited By ~ 1

Author(s):

Reza Shakouri

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Electron Beam Evaporation ◽

The Other ◽

Sio2 Thin Film ◽

Al2o3 Films ◽

Beam Technique ◽

Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.Â The packing density of the samples is studied by change in the spectrum of a coating with humidity

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High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.93-94.545 ◽

2010 ◽

Vol 93-94 ◽

pp. 545-548

Author(s):

B. Saekow ◽

S. Porntheeraphat ◽

Sakon Rahong ◽

S. Jaruvanawat ◽

J. Nukeaw

Keyword(s):

Thin Film ◽

Thin Films ◽

Refractive Index ◽

Electron Beam ◽

Photonic Crystal ◽

Optical Measurement ◽

High Refractive Index ◽

Electron Beam Evaporation ◽

Dielectric Thin Film ◽

Thin Film Layer

The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

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PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

Kongunadu Research Journal ◽

10.26524/krj264 ◽

2018 ◽

Vol 5 (2) ◽

pp. 16-18

Author(s):

Chandar Shekar B ◽

Ranjit Kumar R ◽

Dinesh K.P.B ◽

Sulana Sundar C ◽

Sunnitha S ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistors ◽

Gravimetric Method ◽

Dip Coating ◽

Organic Thin Film Transistors ◽

Poly Vinyl Alcohol ◽

Organic Thin Film ◽

Glass Substrates ◽

Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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