Optoelectronic characterization of zinc complexes for display device applications

2015 ◽  
Vol 26 (9) ◽  
pp. 6762-6768 ◽  
Author(s):  
Vandna Nishal ◽  
Devender Singh ◽  
Raman Kumar Saini ◽  
Shri Bhagwan ◽  
Vijeta Tanwar ◽  
...  
Keyword(s):  
Zinc Complexes ◽  
Display Device ◽  
Device Applications

Optical characterization of Eu 3+ ion doped alkali oxide modified borosilicate glasses for red laser and display device applications

2017 ◽  
Vol 43 (12) ◽  
pp. 8886-8892 ◽  
Author(s):  
B. Naveen Kumar Reddy ◽  
B. Devaprasad Raju ◽  
K. Thyagarajan ◽  
R. Ramanaiah ◽  
Young-Dahl Jho ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Display Device ◽  
Borosilicate Glasses ◽  
Alkali Oxide ◽  
Device Applications

Optoelectronic Characterization of Trivalent Europium Doped Gd2O3 and MGd2O4 (M = Ba or Sr) Nanophosphors for Display Device Applications

2016 ◽  
Vol 11 (3) ◽  
pp. 305-310 ◽  
Author(s):  
Devender Singh ◽  
Vijeta Tanwar ◽  
Shri Bhagwan ◽  
Suman Sheoran ◽  
Vandna Nishal ◽  
...  
Keyword(s):  
Display Device ◽  
Trivalent Europium ◽  
Device Applications

Structural, optical and electrical characterization of nanocrystalline CdO films for device applications

Optik ◽  
2016 ◽  
Vol 127 (10) ◽  
pp. 4254-4257 ◽  
Author(s):  
Vipin Kumar ◽  
D.K. Sharma ◽  
Kapil K. Sharma ◽  
Sonalika Agrawal ◽  
M.K. Bansal ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Device Applications ◽  
Cdo Films

Characterization of Thin Polymer Blend Films using ESEM – No Charging, No Staining.

2001 ◽  
Vol 707 ◽  
Author(s):  
Ian C. Bache ◽  
Catherine M. Ramsdale ◽  
D. Steve Thomas ◽  
Ana-Claudia Arias ◽  
J. Devin MacKenzie ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Environmental Scanning Electron Microscopy ◽  
Environmental Scanning ◽  
Cross Sectional ◽  
Blend Films ◽  
Thin Polymer ◽  
Device Applications ◽  
Scanning Electron

ABSTRACTCharacterising the morphology of thin films for use in device applications requires the ability to study both the structure within the plane of the film, and also through its thickness. Environmental scanning electron microscopy has proved to be a fruitful technique for the study of such films both because contrast can be seen within the film without the need for staining (as is conventionally done for electron microscopy), and because cross-sectional images can be obtained without charging artefacts. The application of ESEM to a particular blend of relevance to photovoltaics is described.

scholarly journals K d determination and characterization of zinc complexes by fluorescence titration

2019 ◽  
Vol 33 (S1) ◽  
Author(s):  
Hunter S Weiland ◽  
Michael J Wolyniak ◽  
Paul H Mueller
Keyword(s):  
Zinc Complexes ◽  
Fluorescence Titration

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Photoelectrochemical Cell ◽  
Oxide Growth ◽  
Metal Source ◽  
Device Applications ◽  
Small Density ◽  
Wet Chemical ◽  
Mos Structures ◽  
Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

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