Optoelectronic Characterization of Trivalent Europium Doped Gd2O3 and MGd2O4 (M = Ba or Sr) Nanophosphors for Display Device Applications

ABSTRACTCharacterising the morphology of thin films for use in device applications requires the ability to study both the structure within the plane of the film, and also through its thickness. Environmental scanning electron microscopy has proved to be a fruitful technique for the study of such films both because contrast can be seen within the film without the need for staining (as is conventionally done for electron microscopy), and because cross-sectional images can be obtained without charging artefacts. The application of ESEM to a particular blend of relevance to photovoltaics is described.

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151Eu Mössbauer Spectroscopic Characterization of EuRu4B4 and the New Boride EuRuB4

Zeitschrift für Naturforschung B ◽

10.1515/znb-2010-0116 ◽

2010 ◽

Vol 65 (1) ◽

pp. 90-94 ◽

Cited By ~ 3

Author(s):

Thomas Harmening ◽

Rainer Pöttgen

Keyword(s):

Boron Atom ◽

Mössbauer Spectra ◽

Induction Furnace ◽

Spectroscopic Characterization ◽

Two Dimensional ◽

Temperature Dependent ◽

X Ray ◽

Trivalent Europium ◽

Mossbauer Spectra

Samples of EuRu4B4 and of the new boride EuRuB4 were prepared from europium, RuB, and RuB4 precursor alloys, respectively, in sealed tantalum tubes in an induction furnace. EuRu4B4 crystallizes with the LuRu4B4 structure, a = 748.1(1), c = 1502.3(4) pm. The structure of EuRuB4 was refined on the basis of X-ray diffractometer data: Pbam, a = 599.7(1), b = 1160.7(3), c = 358.06(7) pm, wR2 = 0.0691, 474 F2 values, and 38 variables. The four crystallographically independent boron sites build up layers which consist of almost regular pentagons and heptagons which sandwich the ruthenium and europium atoms, respectively. Within the two-dimensional [B4] networks each boron atom has a slightly distorted trigonal-planar boron coordination with B-B distances in the range 172 - 186 pm. Temperature-dependent 151Eu Mössbauer spectra show stable trivalent europium for EuRu4B4 and EuRuB4

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Synthesis and characterization of nanocrystalline Ni 0.94 Co 0.03 Mn 0.04 Cu 0.03 Fe 1.96−x Al x O 4 ferrites for microwave device applications

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2013.06.041 ◽

2013 ◽

Vol 345 ◽

pp. 276-281 ◽

Cited By ~ 16

Author(s):

T. Ramesh ◽

R.S. Shinde ◽

S.R. Murthy

Keyword(s):

Microwave Device ◽

Synthesis And Characterization ◽

Device Applications

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Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

MRS Proceedings ◽

10.1557/proc-639-g11.42 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 6

Author(s):

D. Mistele ◽

T. Rotter ◽

R. Ferretti ◽

F. Fedler ◽

H. Klausing ◽

...

Keyword(s):

Gate Dielectrics ◽

Photoelectrochemical Cell ◽

Oxide Growth ◽

Metal Source ◽

Device Applications ◽

Small Density ◽

Wet Chemical ◽

Mos Structures ◽

Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

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