Optimization of sulfurization time for properties of Cu2ZnSnS4 films and cells by sputtering method

2018 ◽  
Vol 29 (22) ◽  
pp. 19137-19146
Author(s):  
Xin Xu ◽  
Shurong Wang ◽  
Xun Ma ◽  
Shuai Yang ◽  
Yaobin Li ◽  
...  
Keyword(s):  
Sulfurization Time

Sulfurization time effects on the growth of Cu2ZnSnS4 thin films by solution method

2013 ◽  
Vol 24 (8) ◽  
pp. 2667-2671 ◽  
Author(s):  
Hao Guan ◽  
Honglie Shen ◽  
Chao Gao ◽  
Xiancong He
Keyword(s):  
Thin Films ◽  
Solution Method ◽  
Time Effects ◽  
Sulfurization Time

Effect of Sulfurization Time on the Formation of CuInS2 Thin Films

2015 ◽  
Vol 44 (4) ◽  
pp. 805-807 ◽  
Author(s):  
Wang Ligang ◽  
Wang Yanlai ◽  
Yao Wei ◽  
Zhu Jun ◽  
Xu Jingang
Keyword(s):  
Thin Films ◽  
Cuins2 Thin Films ◽  
Sulfurization Time

Synthesis of Europium Sulfides by CS2 Sulfurization and Heat Treatment

MRS Advances ◽  
2016 ◽  
Vol 1 (60) ◽  
pp. 3983-3988 ◽  
Author(s):  
Liang Li ◽  
Shinji Hirai ◽  
Eiji Nakamura ◽  
Haibin Yuan
Keyword(s):  
Heat Treatment ◽  
High Purity ◽  
Single Phase ◽  
Inert Atmosphere ◽  
Sulfurization Temperature ◽  
Oxygen Formation ◽  
Sulfur Atmosphere ◽  
Impurity Oxygen ◽  
Sulfurization Time

ABSTRACTThe formation of europium sulfides (Eu3S4 and EuS) via CS2 gas sulfurization of Eu2O3 powder was investigated. Single-phase Eu3S4 was obtained via CS2 gas sulfurization of Eu2O3 at 773 K for periods longer than 0.5 hr and EuS was generated by sulfurization at 1073 K for 8 hr. The higher sulfurization temperature and shorter sulfurization time accelerated the formation of high purity EuS. Synthetic pure Eu3S4 was treated under vacuum, rich-sulfur atmosphere and inert atmosphere, respectively. EuS was obtained when heat treatment was performed at 873 K under vacuum, at 973 K under CS2/Ar atmosphere, and at 1073 K under Ar atmosphere. Heat treatment of Eu3S4 generated a small amount of Eu2O2S due to impurity oxygen. Formation of Eu2O2S could be inhibited by heat treatment under CS2/Ar atmosphere.

Preparation of Ternary Rare Earth Sulfide LnxGd2-xS3 (Ln: La, Tb)

2010 ◽  
Vol 105-106 ◽  
pp. 812-814
Author(s):  
Hai Bin Yuan ◽  
Wei Xin Yi
Keyword(s):  
Crystal Structure ◽  
Rare Earth ◽  
Tetragonal Phase ◽  
Orthorhombic Phase ◽  
Oxide Powders ◽  
Β Phase ◽  
Α Phase ◽  
Formation Behavior ◽  
Sulfurization Time

We investigated the formation behavior of ternary rare earth sulfide LnxGd2-xS3 (Ln: La, Tb). Ternary rare earth sulfide LnxGd2-xS3 (Ln: La, Tb) was synthesized via the sulfurization of their commercial oxide powders using CS2 gas for short sulfurization time. It was found that ternary rare earth sulfide LnxGd2-xS3 (Ln: La, Tb) could be synthesized for a short sulfurization time of 3 h at 1100°C. For LaxGd2-xS3, it crystallizes in α phase (Orthorhombic phase), the crystal structure is different from rare earth sulfide La10S14-xOx which crystallizes in β phase (Tetragonal phase) but is same with rare earth sulfide α-Gd2S3. TbxGd2-xS3 also crystallizes in α phase, the crystal structure is same with rare earth sulfide α-Tb2S3.

Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time

2017 ◽  
Vol 28 (16) ◽  
pp. 11702-11711 ◽  
Author(s):  
Narayana Thota ◽  
M. Gurubhaskar ◽  
A. C. Kasi Reddy ◽  
G. Hema Chandra ◽  
B. R. Mehta ◽  
...  
Keyword(s):  
Thin Films ◽  
Metallic Layer ◽  
Sulfurization Time

Growth of Cu2ZnSnS4 Thin Films by Sulfurization of Co-Sputtered Metallic Precursors

2011 ◽  
Vol 418-420 ◽  
pp. 67-71 ◽  
Author(s):  
Xin Yi Li ◽  
Da Chen Wang ◽  
Qin Yang Du ◽  
Wei Feng Liu ◽  
Guo Shun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Closed System ◽  
Smooth Surface ◽  
Metallic Precursor ◽  
Closed Tube ◽  
Czts Thin Films ◽  
Sulfurization Time

CZTS thin films are fabricated by sulfurizing co-sputtered metallic precursor CuZnSn layers under H2S atmosphere. The precursor layers are Cu-poor, Zn-rich deposited and the fabricated films are about 2 µm in thickness. A closed-tube process is preferred with regard to its producing large closely pack grains with smooth surface. XRD and Raman confirm the CZTS structure and the impurities on the surface are removed after suitable chemistry treatments. The band gap of the CZTS is determined to be 1.48 eV by extrapolation. Some more CZTS films are product with slightly changed parameters, sulfurization time, temperature and concentration of H2S, respectively. It is supposed that beside sulfurization time, the temperature could be more significant than concentration of H2S in the closed system.

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