ABSTRACTAmorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.
The structure，optical and electrical properties of Li-N dual-acceptor doped p-type ZnO thin films prepared by sol-gel method