The doping effect of Al2O3 on the high-frequency electrical and magnetic properties of CoFeB soft magnetic thin films deposited on Si substrates using RF magnetron sputtering technique

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

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Microstructure, optical, electrical, and magnetic properties of ZnO/CuO thin films prepared using two-stage magnetron sputtering and diffusion doping process

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-02949-z ◽

2020 ◽

Vol 31 (5) ◽

pp. 4017-4026

Author(s):

Tai-Hsiang Liu ◽

Fei-Yi Hung ◽

Cheng-Hung Chen ◽

Kuan-Jen Chen

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Magnetron Sputtering ◽

Two Stage ◽

Electrical And Magnetic Properties ◽

And Diffusion

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Effects of ZnO layer on anisotropy magnetoresistance of Ni81Fe19 films

Modern Physics Letters B ◽

10.1142/s0217984914500432 ◽

2014 ◽

Vol 28 (06) ◽

pp. 1450043 ◽

Cited By ~ 1

Author(s):

Shuyun Wang ◽

Yuanmei Gao ◽

Tiejun Gao ◽

Yuan He ◽

Hui Zhang ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Layer Thickness ◽

Magnetic Thin Films ◽

Anisotropic Magnetoresistance ◽

Experimental Conditions ◽

Method Effects ◽

20 Nm

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.

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