Effect of annealing on structural and electrical properties of the Li–Mn–O thin films, prepared by high frequency RF magnetron sputtering

2011 ◽  
Vol 72 (11) ◽  
pp. 1251-1255 ◽  
Author(s):  
Rajive M. Tomy ◽  
K.M. Anil Kumar ◽  
P.B. Anand ◽  
S. Jayalekshmi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Rf Magnetron Sputtering ◽  
Structural And Electrical Properties

Effect of film thickness on the structural and electrical properties of Ga-doped ZnO thin films prepared on glass and Al2O3 (0001) substrates by RF magnetron sputtering method

2009 ◽  
Vol 24 (2) ◽  
pp. 441-447 ◽  
Author(s):  
Seung Wook Shin ◽  
S.M. Pawar ◽  
Tae-Won Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Plane Orientation ◽  
Structural And Electrical Properties ◽  
Doped Zno

Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

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