Role of solution chemistry on the trapping of radionuclide Th(IV) using titanate nanotubes as an efficient adsorbent

2013 ◽  
Vol 298 (1) ◽  
pp. 455-464 ◽  
Author(s):  
Guodong Sheng ◽  
Baowei Hu
2015 ◽  
Vol 21 (5) ◽  
pp. 407-413 ◽  
Author(s):  
David R. Turner

2017 ◽  
Vol 579 ◽  
pp. 776-785 ◽  
Author(s):  
Dengjun Wang ◽  
Chongyang Shen ◽  
Yan Jin ◽  
Chunming Su ◽  
Lingyang Chu ◽  
...  

2020 ◽  
pp. 1-38
Author(s):  
Ana Laura Ruiz-Castillo ◽  
Mariana Hinojosa-Reyes ◽  
Roberto Camposeco-Solis ◽  
Facundo Ruiz

2011 ◽  
Vol 78 (2) ◽  
pp. 189-200 ◽  
Author(s):  
A.W. Zularisam ◽  
Anwar Ahmad ◽  
Mimi Sakinah ◽  
A.F. Ismail ◽  
T. Matsuura

2011 ◽  
Vol 168 (1) ◽  
pp. 178-182 ◽  
Author(s):  
Guodong Sheng ◽  
Shitong Yang ◽  
Jiang Sheng ◽  
Donglin Zhao ◽  
Xiangke Wang

2005 ◽  
Vol 865 ◽  
Author(s):  
N. Naghavi ◽  
C. Hubert ◽  
O. Roussel ◽  
L. Sapin ◽  
M. Lamirand ◽  
...  

AbstractThis paper presents the influence of the solution chemistry of chemical bath deposition (pH and complexing agents) on the performance of CuIn(S,Se)2 cells after an initial CN treatment. It is shown that it is possible to modify the deposition conditions of the CdS by increasing the pH of the solution and by replacing the complexing agent (ammonia) by citrate ions. Both NH3 based and citrate based process give very homogenous and covering thin films. However, in the case of the citrate based process a decrease of open circuit voltage (Voc) and fill factor (FF) and thus of the cell efficiencies is observed. This points out that the main role of the buffer layer is not only related to the specific properties of the CdS itself but also to the near surface modifications of the CuIn(S,Se)2 caused by the presence of the complexing agent in the bath.


Langmuir ◽  
2007 ◽  
Vol 23 (13) ◽  
pp. 7162-7169 ◽  
Author(s):  
Gexin Chen ◽  
Sharon L. Walker

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