Optical properties of type-II InGaN/GaAsN/GaN quantum wells

2009 ◽  
Vol 41 (11-13) ◽  
pp. 779-785 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Yong-Tak Lee ◽  
Jongwoon Park
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Type Ii

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

1996 ◽  
Vol 74 (5-6) ◽  
pp. 202-208 ◽  
Author(s):  
M. Sacilotti ◽  
P. Abraham ◽  
M. Pitaval ◽  
M. Ambri ◽  
T. Benyattou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Conduction Band Edge ◽  
Type Ii ◽  
Semiconducting Materials ◽  
Band Bending ◽  
Device Applications ◽  
Pl Intensity ◽  
Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

Nonlinear optical properties of type-II quantum wells

1991 ◽  
Vol 44 (7) ◽  
pp. 3043-3053 ◽  
Author(s):  
G. R. Olbright ◽  
W. S. Fu ◽  
J. F. Klem ◽  
H. M. Gibbs ◽  
G. Khitrova ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Type Ii ◽  
Type Ii Quantum Wells

Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

1992 ◽  
Vol 28 (10) ◽  
pp. 2404-2415 ◽  
Author(s):  
W.S. Fu ◽  
J.S. Harris ◽  
R. Binder ◽  
S.W. Koch ◽  
J.F. Klem ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Type Ii ◽  
Type Ii Quantum Wells

Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

2013 ◽  
Vol 114 (22) ◽  
pp. 223510 ◽  
Author(s):  
F. Janiak ◽  
M. Motyka ◽  
G. Sęk ◽  
M. Dyksik ◽  
K. Ryczko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Type Ii ◽  
Type Ii Quantum Wells

scholarly journals Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure

2021 ◽  
Vol 51 (2) ◽  
Author(s):  
M. Dyksik ◽  
M. Motyka ◽  
M. Rygała ◽  
A. Pfenning ◽  
F. Hartmann ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Type Ii ◽  
Optical Transitions ◽  
Comprehensive Investigation ◽  
Tunneling Diode ◽  
Band Structure Calculations ◽  
Structure Calculations

We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.

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