In this work, the simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the nonlinear optical rectification (OR), second- and third-harmonic generation (SHG and THG) in a GaAs/Ga[Formula: see text]Al[Formula: see text]As morse quantum well (QW) are studied. The expressions of OR, SHG and THG in morse QW were derived with the use of the compact-density-matrix approach and iterative method. The simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the effective mass have been taken into account. It is found that (1) the presence of the aluminum concentration, hydrostatic pressure and temperature have a great influence on the symmetry of the system, the nonlinear OR, SHG and THG. (2) the variation of the resonant peaks of the OR and SHG shows complicated behavior as the temperature changes. (3) the temperature effect is weaker than the aluminum concentration and hydrostatic pressure effects on the nonlinear OR, SHG and THG. The influences of different parameters of GaAs/Ga[Formula: see text]Al[Formula: see text]As morse QW and applied field strengths on the nonlinear OR, SHG and THG are discussed.
Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well
