Design Method of a Broadband Wide-Angle Plasmonic Absorber in the Visible Range

Plasmonics ◽  
2016 ◽  
Vol 12 (1) ◽  
pp. 117-124 ◽  
Author(s):  
Xianshun Ming ◽  
Qiaofeng Tan
Keyword(s):  
Design Method ◽  
Visible Range ◽  
Wide Angle

Geometrical-based quasi-aspheric surface description and design method for miniature, low-distortion, wide-angle camera lens

2020 ◽  
Vol 59 (27) ◽  
pp. 8408
Author(s):  
Zhenfeng Zhuang ◽  
Xavier Dallaire ◽  
Jocelyn Parent ◽  
Patrice Roulet ◽  
Simon Thibault
Keyword(s):  
Design Method ◽  
Wide Angle ◽  
Aspheric Surface ◽  
Camera Lens ◽  
Surface Description ◽  
Low Distortion ◽  
Wide Angle Camera

scholarly journals A wide-angle and TE/TM polarization-insensitive terahertz metamaterial near-perfect absorber based on multi-layer plasmonic structure

2021 ◽  
Author(s):  
Yuanbo Sun ◽  
Yanpeng Shi ◽  
Xiaoyu Liu ◽  
Jinmei Song ◽  
Meiping Li ◽  
...  
Keyword(s):  
Design Method ◽  
Metamaterial Absorber ◽  
Perfect Absorber ◽  
Wide Angle ◽  
Flexible Design ◽  
Plasmonic Structure ◽  
Terahertz Band ◽  
Polarization Insensitive ◽  
Perfect Metamaterial Absorber

A kind of near-perfect metamaterial absorber, made of only Au and Si, has been presented in the terahertz band with extremely high absorptance. A flexible design method is proposed, which...

Design and Fabrication of Far-Ultraviolet Reflective Broadband Filter Based on Dielectric Materials

2018 ◽  
Vol 72 (6) ◽  
pp. 943-946 ◽  
Author(s):  
Xiaodong Wang ◽  
Bo Chen ◽  
Ling Yao
Keyword(s):  
Wavelength Range ◽  
Optical Materials ◽  
Design Method ◽  
Dielectric Materials ◽  
Magnesium Fluoride ◽  
Lanthanum Fluoride ◽  
Wide Angle ◽  
Successful Design ◽  
Far Ultraviolet ◽  
High Reflectance

In the far-ultraviolet (UV) region, optical materials are dispersive and absorbing. The previous successful design method utilized in the visible band should be re-examined. We report on the design and fabrication of a far-UV reflective broadband filter based on dielectric materials lanthanum fluoride (LaF3) and magnesium fluoride (MgF2). Extended bandwidth technology is utilized in designing this filter. The obtained filter has a high reflectance in the working wavelength range of 140–180 nm, meanwhile, with good suppression in shorter and longer wavelength regions. In 2016, this filter was employed in a wide-angle aurora imager (WAAI) installed in the Feng Yun III satellite that will be launched in China.

CBED Shadow Images and Cs:Aberration Measurement

1982 ◽  
Vol 40 ◽  
pp. 696-697
Author(s):  
R. W. Carpenter ◽  
I.Y.T. Chan ◽  
J. M. Cowley
Keyword(s):  
Focal Point ◽  
Spherical Aberration ◽  
Optic Axis ◽  
Wide Angle ◽  
Caustic Surface ◽  
Convergent Beam

Wide-angle convergent beam shadow images(CBSI) exhibit several characteristic distortions resulting from spherical aberration. The most prominent is a circle of infinite magnification resulting from rays having equal values of a forming a cross-over on the optic axis at some distance before reaching the paraxial focal point. This distortion is called the tangential circle of infinite magnification; it can be used to align and stigmate a STEM and to determine Cs for the probe forming lens. A second distortion, the radial circle of infinite magnification, results from a cross-over on the lens caustic surface of rays with differing values of ∝a, also before the paraxial focal point of the lens.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Reconstruction of Chitin-Protein Complexes Using Correlation Averaging Methods: Ovipositor of the Ichneumon Fly Megarhyssa

1980 ◽  
Vol 38 ◽  
pp. 38-39
Author(s):  
L. T. Germinario ◽  
J. Blackwell ◽  
J. Frank
Keyword(s):  
Protein Complexes ◽  
Hexagonal Lattice ◽  
Uranyl Acetate ◽  
Optical Diffraction ◽  
Insect Cuticle ◽  
High Dose ◽  
Wide Angle ◽  
X Ray ◽  
Averaging Methods ◽  
Digital Correlation

This report describes the use of digital correlation and averaging methods 1,2 for the reconstruction of high dose electron micrographs of the chitin-protein complex from Megarhyssa ovipositor. Electron microscopy of uranyl acetate stained insect cuticle has demonstrated a hexagonal array of unstained chitin monofibrils, 2.4−3.0 nm in diameter, in a stained protein matrix3,4. Optical diffraction Indicated a hexagonal lattice with a = 5.1-8.3 nm3 A particularly well ordered complex is found in the ovipositor of the ichneumon fly Megarhyssa: the small angle x-ray data gives a = 7.25 nm, and the wide angle pattern shows that the protein consists of subunits arranged in a 61 helix, with an axial repeat of 3.06 nm5.

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