Role of Zinc Source in Chemical Bath Deposition of Zinc Sulfide Thin Films on Si3N4

2014 ◽  
Vol 43 (11) ◽  
pp. 4317-4321 ◽  
Author(s):  
P. A. Luque ◽  
Claudia M. Gómez-Gutiérrez ◽  
G. Lastra ◽  
A. Carrillo-Castillo ◽  
M. A. Quevedo-López ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Zinc Source

Role of hydrazine in the enhanced growth of zinc sulfide thin films using chemical bath deposition for Cu(In,Ga)Se2 solar cell application

2020 ◽  
Vol 105 ◽  
pp. 104729 ◽  
Author(s):  
Jeha Kim ◽  
Cha Ran Lee ◽  
Vinaya Kumar Arepalli ◽  
Sung-Jun Kim ◽  
Woo-Jung Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Solar Cell Application

In situ monitoring the role of citrate in chemical bath deposition of PbS thin films

CrystEngComm ◽  
2016 ◽  
Vol 18 (1) ◽  
pp. 149-156 ◽  
Author(s):  
Sucheta Sengupta ◽  
Maayan Perez ◽  
Alexander Rabkin ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Light Scattering ◽  
Optical Absorption ◽  
Chemical Bath Deposition ◽  
Trisodium Citrate ◽  
In Situ Monitoring ◽  
Cluster Mechanism ◽  
Absorption Measurements

We report the formation of size tunable PbS nanocubes induced by the presence of trisodium citrate during growth of PbS thin films by chemical bath deposition. The presence of citrate induces growth by the cluster mechanism which is monitored by XRD and HRSEM, along with real time light scattering and optical absorption measurements.

Zinc Sulfide Nanoscaled Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells by Chemical Bath Deposition

2008 ◽  
Vol 51 ◽  
pp. 125-130 ◽  
Author(s):  
Rong Fuh Louh ◽  
Warren Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Energy Gap ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Complexing Agents ◽  
Study Results

Chemical bath deposition (CBD) is a fairly simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be prepared on the flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of varying acidity. This study particularly aims at the growth dependence and optical property of ZnS thin films in the CBD process by different experiment parameters, whereas we intend to choose suitable types of zinc ionic precursors to be coupled with various CBD parameters such as reaction temperature and time, precursor concentration, types and complexing agents as well as post-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the adequate growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The results would lead to a potential application of buffer layer for the Cu (In,Ga)Se2 based thin film solar cells. The analytic instrument including SEM, AFM, UV-VIS were used to examine the CBD-derived nanosized ZnS buffer layers for the thin film solar cells. The ZnS thin films prepared by the chemical bath deposition in this study results in film thickness of 80 ~ 100 nm, high transmittance of 80~85% and the energy gap of 3.89 ~ 3.98 eV.

Role of complexing agents in chemical bath deposition of lead sulfide thin films

2014 ◽  
Vol 121 ◽  
pp. 19-21 ◽  
Author(s):  
A. Carrillo-Castillo ◽  
R.C. Ambrosio Lázaro ◽  
A. Jimenez-Pérez ◽  
C.A. Martínez Pérez ◽  
E.C. de la Cruz Terrazas ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Lead Sulfide ◽  
Complexing Agents

Photoluminescence studies on copper zinc sulfide thin films synthesized through chemical bath deposition

2019 ◽  
Author(s):  
J. Jubimol ◽  
M. S. Sreejith ◽  
C. Sudha Kartha ◽  
K. P. Vijayakumar ◽  
Godfrey Louis
Keyword(s):  
Thin Films ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Copper Zinc ◽  
Photoluminescence Studies

Role of pH in aqueous alkaline chemical bath deposition of lead sulfide thin films

2012 ◽  
Vol 67 (1) ◽  
pp. 39-41 ◽  
Author(s):  
A.N. Chattarki ◽  
S.S. Kamble ◽  
L.P. Deshmukh
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Lead Sulfide

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Sign in / Sign up

Export Citation Format

Share Document