Effect of Temperature and Illumination on the Current–Voltage Characteristics of a Al/p-GaSe/In Diode

2020 ◽  
Vol 49 (10) ◽  
pp. 5698-5704 ◽  
Author(s):  
Hayrunnisa Budak ◽  
Songül Duman ◽  
Fikriye Şeyma Kaya ◽  
Afsoun Ashkhasi ◽  
Bekir Gürbulak
Keyword(s):  
Effect Of Temperature ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Study of the Importance of MPPT Algorithm for Photovoltaic Systems under Abrupt Change in Irradiance and Temperature Conditions

2020 ◽  
Vol 15 ◽  
Keyword(s):  
Abrupt Change ◽  
Effect Of Temperature ◽  
Duty Ratio ◽  
Cell Temperature ◽  
Pv System ◽  
Pv Systems ◽  
Pv Panel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Temperature Constant

In order to understand the importance of MPPT algorithms, modeling and simulation of a PV system with and without MPPT algorithm using MATLAB/SIMULINK under different irradiance and temperature variations are analyzed in this chapter. The MPPT technique used is Incremental Conductance (INC) algorithm. First of all, the P-V (power-voltage) and I-V (Current-Voltage) characteristics are noticed for different values of solar irradiance while keeping the cell temperature constant. Later on, for different temperature values with constant irradiance levels the characteristics of PV panel has been studied. The effect of temperature and irradiance on power, current, voltage and duty ratio of the PV system with and without INC MPPT algorithm is analyzed for understanding the importance of MPPT techniques in PV systems

scholarly journals The effect of temperature on the current-voltage characteristics of Cd3As2 + MnAs

2019 ◽  
Vol 34 (3) ◽  
pp. 22-29
Author(s):  
L.A. Saypulaeva ◽  
◽  
Sh. B. Abdulvagidov ◽  
M.M. Gadzhialiev ◽  
A.G. Alibekov ◽  
...  
Keyword(s):  
Effect Of Temperature ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction

e-Polymers ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 75-82
Author(s):  
Haci Ökkes Demir ◽  
Zakir Caldıran ◽  
Kadem Meral ◽  
Yılmaz Şahin ◽  
Murat Acar ◽  
...  
Keyword(s):  
Reverse Current ◽  
Electrical Characterization ◽  
Effect Of Temperature ◽  
Barrier Heights ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

AbstractA poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φb), ideality factor (η), reverse current (I0) and series resistance (Rs), were investigated. It was seen that the Φb and the I0 values of the device increased with increasing temperature, while the η and the Rs values decreased. The temperature dependences of the Φb and the η were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I0/T2) vs. 1/ηT plot, the values of the activation energy (Ea) and Richardson constant (A*) were calculated as 0.324 eV and 2.84×10-7 A cm-2K-2, respectively. The experimental value of the Rs from the forward current-voltage plots decreased with an increase in the temperature.

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