Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well

1997 ◽  
Vol 26 (2) ◽  
pp. L6-L8 ◽  
Author(s):  
C. Guillot ◽  
M. Dugay ◽  
F. Barbarin ◽  
V. Soulière ◽  
P. Abraham ◽  
...  
Keyword(s):  
Quantum Well ◽  
Accurate Determination ◽  
Semiconductor Structure ◽  
Band Offset ◽  
Voltage Profile ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Capacitance Voltage ◽  
Quantum Semiconductor

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

2009 ◽  
Vol 94 (24) ◽  
pp. 241906 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
H. Zhong ◽  
A. Tyagi ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Well ◽  
Polarization Field ◽  
Single Quantum ◽  
Single Quantum Well

Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique

2000 ◽  
Vol 77 (6) ◽  
pp. 776-778 ◽  
Author(s):  
J. Arias ◽  
I. Esquivias ◽  
E. C. Larkins ◽  
S. Bürkner ◽  
S. Weisser ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Capacitance Voltage

Photoluminescence determination of well depth ofGa0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum well

1985 ◽  
Vol 32 (6) ◽  
pp. 3806-3810 ◽  
Author(s):  
K. Shum ◽  
P. P. Ho ◽  
R. R. Alfano ◽  
D. F. Welch ◽  
G. W. Wicks ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Well Depth

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

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