scholarly journals Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well

1999 ◽  
Vol 28 (8) ◽  
pp. 975-979 ◽  
Author(s):  
C. Guillot ◽  
J. Achard ◽  
F. Barbarin ◽  
M. Dugay
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Thermal Evolution ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Conduction Band Offset ◽  
Capacitance Voltage

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling

1995 ◽  
Vol 24 (10) ◽  
pp. 1381-1386 ◽  
Author(s):  
S. H. Park ◽  
Markarian M. ◽  
PKL Yu ◽  
P. M. Asbeck
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Capacitance Voltage

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

2011 ◽  
Vol 109 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. D. Singh ◽  
V. K. Dixit ◽  
Shailesh K. Khamari ◽  
Ravi Kumar ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Quantum States ◽  
Band Offset ◽  
Type Ii ◽  
Conduction Band Offset ◽  
Capacitance Voltage

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

scholarly journals CONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES

1998 ◽  
Vol 47 (8) ◽  
pp. 1339
Author(s):  
LU LI-WU ◽  
ZHANG YAN-HUA ◽  
YANG GUO-WEN ◽  
WANG ZHAN-GUO ◽  
J.WANG ◽  
...  
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset
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