Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

1999 ◽  
Vol 28 (8) ◽  
pp. L13-L16 ◽  
Author(s):  
Z-Q. Fang ◽  
Q. H. Xie ◽  
D. C. Look ◽  
J. Ehret ◽  
J. E. Van Nostrand
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Self Assembled ◽  
Transient Spectroscopy

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy

2004 ◽  
Vol 241 (12) ◽  
pp. 2811-2815 ◽  
Author(s):  
J. S. Kim ◽  
E. K. Kim ◽  
H. J. Kim ◽  
E. Yoon ◽  
I.-W. Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

scholarly journals Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP

1995 ◽  
Vol 78 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
Jaime M. Martin ◽  
S. García ◽  
I. Mártil ◽  
G. González‐Díaz ◽  
E. Castán ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 253-256 ◽  
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Lars Knoll ◽  
Vinoth Kumar Sundaramoorthy
Keyword(s):  
Point Defects ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Optical Pulse ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ionization Energies ◽  
Transient Spectroscopy

The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy

2005 ◽  
Vol 44 (7B) ◽  
pp. 5670-5672 ◽  
Author(s):  
Eun Kyu Kim ◽  
Jin Soak Kim ◽  
Soon-Yong Kwon ◽  
Hee Jin Kim ◽  
Euijoon Yoon
Keyword(s):  
Quantum Dots ◽  
Energy Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy
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