The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 253-256 ◽  
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Lars Knoll ◽  
Vinoth Kumar Sundaramoorthy
Keyword(s):  
Point Defects ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Optical Pulse ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ionization Energies ◽  
Transient Spectroscopy

The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy

2004 ◽  
Vol 241 (12) ◽  
pp. 2811-2815 ◽  
Author(s):  
J. S. Kim ◽  
E. K. Kim ◽  
H. J. Kim ◽  
E. Yoon ◽  
I.-W. Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

scholarly journals Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP

1995 ◽  
Vol 78 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
Jaime M. Martin ◽  
S. García ◽  
I. Mártil ◽  
G. González‐Díaz ◽  
E. Castán ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy

2010 ◽  
Vol 248 (4) ◽  
pp. 941-949 ◽  
Author(s):  
Martin Ellguth ◽  
Matthias Schmidt ◽  
Rainer Pickenhain ◽  
Holger V. Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Zno Thin Films ◽  
Transient Spectroscopy

scholarly journals Electrical Characterization of Al/SiNx:H/n and p-In0.53Ga0.47As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4479-4484 ◽  
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Juan Barbolla ◽  
Nieves Blanco ◽  
Ignacio Mártil ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Techniques ◽  
Transient Spectroscopy

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 253-256 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Fourier Transform ◽  
Energy Range ◽  
Band Gap ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Isochronal Annealing ◽  
Transient Spectroscopy ◽  
P Type

An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature.

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 455-458 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto ◽  
Gerhard Pensl
Keyword(s):  
High Purity ◽  
Deep Level ◽  
Electrical Characterization ◽  
Current Mode ◽  
Deep Levels ◽  
Light Illumination ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

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