scholarly journals In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

2010 ◽  
Vol 5 (12) ◽  
pp. 1935-1941 ◽  
Author(s):  
B. Sanduijav ◽  
D. G. Matei ◽  
G. Springholz
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Patterned Substrates ◽  
Tunneling Microscopy ◽  
In Situ Control

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

1991 ◽  
Vol 237 ◽  
Author(s):  
R. Stalder ◽  
C. Schwarz ◽  
H. Sirringhaus ◽  
H. VON Känel
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Real Space ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Detailed Surface ◽  
Surface Reconstructions

ABSTRACTEpitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Migration Enhanced Epitaxy of GaAs Studied by Reflection High Energy Electron Diffraction and Scanning Tunneling Microscopy

1993 ◽  
Vol 312 ◽  
Author(s):  
Jianming Fu ◽  
D. L. Miller ◽  
J. Kim ◽  
M. C. Gallagher ◽  
R. F. Willis
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Migration Enhanced Epitaxy ◽  
Step Density

AbstractMigration enhanced epitaxy (MEE) of GaAs on (001) GaAs substrates was studied by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). In MEE, Ga and As species are alternately deposited on the growing surface. Ga adatom migration can be enhanced by the low arsenic pressure environment. The STM study was performed ex-situ by the arsenic capping and decapping procedure. We have demonstrated the correlation between the peak RHEED specular intensity during MEE growth and the variation of the lateral step density on the surface, even though the surface stoichiometry changes repetitively during MEE. The peak RHEED intensity during MEE is inversely dependent on the surface step density. The MEE surface exhibited a lower step density than the MBE surface, as shown by both RHEED and STM. However, the MEE surface still exhibited a much higher step density than a well-annealed surface. Consequently we believe that to achieve an atomically flat interface, annealing at high temperature in an arsenic flux is still necessary even if MEE is employed.

Reconstructions of 6H-SiC(0001) Surfaces Studied by Scanning Tunneling Microscopy and Reflection High-Energy Electron Diffraction

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2211-2216 ◽  
Author(s):  
Yoshiyuki Hisada ◽  
Kazuhiko Hayashi ◽  
Kiyoshige Kato ◽  
Tomohiro Aoyama ◽  
Shinichi Mukainakano ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy
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