Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation

2010 ◽  
Vol 14 (2) ◽  
pp. 83-88
Author(s):  
Li-feng Bian ◽  
Zhao Jin
Keyword(s):  
Quantum Dots ◽  
Optical Transition ◽  
Resonant Excitation ◽  
Carrier Relaxation ◽  
Cap Layer ◽  
Self Assembled

Energy dependent carrier relaxation in self-assembled InAs/GaAs quantum dots

2008 ◽  
Vol 5 (9) ◽  
pp. 2709-2712
Author(s):  
H. S. Ling ◽  
C. P. Lee ◽  
S. Y. Wang ◽  
M. C. Lo
Keyword(s):  
Quantum Dots ◽  
Carrier Relaxation ◽  
Self Assembled ◽  
Energy Dependent

Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions

2002 ◽  
Vol 190 (2) ◽  
pp. 583-587 ◽  
Author(s):  
C. Rudamas ◽  
J. Mart�nez-Pastor ◽  
A. Garc�a-Crist�bal ◽  
Ph. Roussignol ◽  
J.M. Garc�a ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Excitation ◽  
Carrier Recombination ◽  
Self Assembled ◽  
Excitation Conditions

Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots

2001 ◽  
Vol 63 (24) ◽  
Author(s):  
H. Htoon ◽  
D. Kulik ◽  
O. Baklenov ◽  
A. L. Holmes ◽  
T. Takagahara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Quantum Decoherence ◽  
Carrier Relaxation ◽  
Self Assembled

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Indium Composition ◽  
Cap Layer ◽  
Self Assembled ◽  
The Impact

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

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