Lasing Frequency Up-Conversion by Using Thermal Population

2019 ◽  
Vol 24 (5) ◽  
pp. 579-583
Author(s):  
Sampa Nkonde ◽  
Chun Jiang
Keyword(s):  
Lasing Frequency

DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation

2007 ◽  
Vol 31 ◽  
pp. 36-38 ◽  
Author(s):  
Lip Fah Chong ◽  
Jing Hua Teng ◽  
Ee Leong Lim ◽  
Norman Soo Seng Ang ◽  
J.R. Dong ◽  
...  
Keyword(s):  
Single Mode ◽  
Distributed Feedback ◽  
Couple Mode ◽  
Threshold Condition ◽  
Couple Mode Theory ◽  
Gain Margin ◽  
Ridge Waveguides ◽  
Multi Wavelength ◽  
Dfb Laser ◽  
Lasing Frequency

In this paper, we present the theoretical investigation of index-coupled distributed feedback (DFB) laser with tilted single mode ridge waveguides. By tilting part of the ridge waveguide in various degrees, DFB laser with manifold effective grating periods can be realized. The structure is analyzed using couple mode theory in matrix form based on threshold analysis. Important parameters of DFB laser like resonant frequency and threshold gains are obtained by solving the eigen-equation. The results indicate not only that the lasing frequency is modulated by the waveguide titling angle, but also large Gain Margin (GM) can be achieved at the threshold condition which enhance the stable single mode operation in index-coupled DFB laser.

Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure

1995 ◽  
Vol 406 ◽  
Author(s):  
Wojciech Krystek ◽  
M. Leibovitch ◽  
Fred H. Pollak ◽  
Godfrey Gumbs ◽  
T. Konopelski
Keyword(s):  
Room Temperature ◽  
Heavy Hole ◽  
Index Of Refraction ◽  
Single Quantum Well ◽  
Graded Index ◽  
Hole Level ◽  
Function Calculation ◽  
Lasing Frequency ◽  
Good Agreement

AbstractUsing contactless electroreflectance at 300K we have characterized the complete potential profile of a pseudomorphic 0.98 μm InGaAs/GaAs/GaAlAs graded index of refraction separate confinement heterostructure laser fabricated by molecular beam epitaxy. Signals were detected from all three relevant portions of the sample. Comparison of the observed transitions from the InGaAs single quantum well (SQW) section with an envelope function calculation (including the effects of strain) made it possible to evaluate the In composition and width of SQW. These values were in good agreement with the intended parameters. The energy of 11H, the fundamental conduction to heavy-hole level (which is closely related to the lasing frequency) can easily be determined to less than ± 1 nm at 300K. From the period of the observed Franz-Keldysh oscillations from the graded GaAlAs region it was possible to directly evaluate the built-in electric field in the structure.

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