Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment

2022 ◽  
Author(s):  
Xiu-Yu Lin ◽  
Hsing-Cheng Chang ◽  
Bo-Lin Huang ◽  
Yow-Jon Lin
Keyword(s):  
Ohmic Contact

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

2020 ◽  
Vol 59 (8) ◽  
pp. 081005
Author(s):  
Qiangjian Sun ◽  
Junhua Long ◽  
Pan Dai ◽  
Xinping Huang ◽  
Shuhong Nie ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Screen Printing ◽  
Silver Paste

Morphological study of the Al–Ti ohmic contact to p-type SiC

2002 ◽  
Vol 46 (5) ◽  
pp. 689-693 ◽  
Author(s):  
S.E. Mohney ◽  
B.A. Hull ◽  
J.Y. Lin ◽  
J. Crofton
Keyword(s):  
Ohmic Contact ◽  
Morphological Study ◽  
P Type

Ohmic contact to nonpolara-plane p-type GaN using Ni/Au

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HA04 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Dong-min Lee ◽  
Sung-Nam Lee ◽  
Keun-Man Song ◽  
Jae-Sik Yoon ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
P Type

Formation of a stable ohmic contact to CdTe thin films through the diffusion of P from Ni-P

1995 ◽  
Vol 10 (1) ◽  
pp. 71-76 ◽  
Author(s):  
B Ghosh ◽  
S Purakayastha ◽  
P K Datta ◽  
R W Miles ◽  
M J Carter ◽  
...  
Keyword(s):  
Thin Films ◽  
Ohmic Contact ◽  
Cdte Thin Films

Low resistance ohmic contact onn‐CdTe

1994 ◽  
Vol 65 (4) ◽  
pp. 475-477 ◽  
Author(s):  
D. Brun ◽  
B. Daudin ◽  
E. Ligeon
Keyword(s):  
Ohmic Contact ◽  
Low Resistance

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

2008 ◽  
Vol 41 (17) ◽  
pp. 175105
Author(s):  
Yow-Jon Lin ◽  
Feng-Tso Chien ◽  
Ching-Ting Lee ◽  
Chi-Shin Lin ◽  
Yang-Chun Liu
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ti/Ni/Ti/Au ohmic contact to n-type 6H-SiC

2003 ◽  
Vol 98 (2) ◽  
pp. 177-180 ◽  
Author(s):  
D. Basak ◽  
S. Mahanty
Keyword(s):  
Ohmic Contact
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