Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion

2021 ◽  
pp. 108355
Author(s):  
Yuping Jia ◽  
Xiaojuan Sun ◽  
Zhiming Shi ◽  
Ke Jiang ◽  
Tong Wu ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Radiation Detectors ◽  
Improved Performance ◽  
Contact Electrode

scholarly journals Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ren-Hao Chang ◽  
Kai-Chao Yang ◽  
Tai-Hong Chen ◽  
Li-Wen Lai ◽  
Tsung-Hsin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Layer Surface ◽  
Barrier Heights ◽  
Ammonium Sulfide ◽  
Current Voltage ◽  
Contact Electrode

We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sxsolutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZnacceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sxsolution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond andVZnacceptors.

Improved performance of GaAs radiation detectors

2002 ◽  
Author(s):  
F. Nava ◽  
G. Bertuccio ◽  
P. Vanni ◽  
M.E. Fantacci ◽  
C. Canali ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Improved Performance

scholarly journals An investigation of secondary electron emission from ZnO based nanomaterials for future applications in radiation detectors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
P. Boutachkov ◽  
K. O. Voss ◽  
K. Lee ◽  
M. S. Song ◽  
C. Yi ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Radiation Detectors ◽  
Regular Pattern ◽  
Average Increase ◽  
Particle Detectors ◽  
One Dimensional ◽  
Improved Performance ◽  
One Dimensional Nanostructures

AbstractThis paper discusses the use of nanomaterials for the improved performance of time-of-flight particle detectors based on secondary electron emission (SEE). The purpose of the research presented in this paper is to find a nanomaterial that has a higher SEE than gold. In this article, we present a measurement of the SEE properties from 1D (one-dimensional) nanostructures of ZnO and ZnO/GaN (ZnO with GaN coating) composed of a mostly regular pattern of nanotubes grown on a thin Si3N4 substrate. The study was performed with 4.77 meV/u Au beam. We observed an average increase of 2.5 in the SEE properties from the 1D ZnO nanotubes compared to gold.

scholarly journals Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 470
Author(s):  
Xiaolu Yuan ◽  
Jiangwei Liu ◽  
Jinlong Liu ◽  
Junjun Wei ◽  
Bo Da ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Annealing Temperature ◽  
Electronic Devices ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Specific Contact ◽  
Contact Electrode

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.

scholarly journals The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Hung-Jen Chiu ◽  
Tai-Hong Chen ◽  
Li-Wen Lai ◽  
Ching-Ting Lee ◽  
Jhen-Dong Hong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Radio Frequency ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Reverse Current ◽  
Specific Contact Resistance ◽  
Zno Film ◽  
Current Voltage ◽  
Specific Contact ◽  
Contact Electrode

(Al + N)-codopedp-type zinc oxide (ZnO)/undopedn-type ZnO homojunction structure was deposited onto Si (100) substrate by using radio frequency (rf) magnetron cosputtering system. Transparent indium tin oxide (ITO)-ZnO cosputtered film was employed as the ohmic contact electrode to then-type ZnO film, and the specific contact resistance was optimized to2.9×10-6 Ω cm2after treating by a rapid thermal annealing (RTA) process at 400°C for 5 min under vacuum ambient. The ohmic contact behavior between the metallic Ni/Au andp-ZnO film also was improved to3.5×10-5 Ω cm2after annealing at 300°C for 3 min under nitrogen ambient. The interfacial diffusion of these ohmic contact systems which led to the optimization of the specific contact resistances by the RTA process was investigated by the Auger electron spectroscopy (AES) depth profile measurements. The diode characteristics of the resultingp-ZnO/n-ZnO homojunction structure realized with these ohmic contact electrodes were confirmed by current-voltage (I-V) measurement, which performed a forward turn-on voltage of 1.44 V with a reverse current of1.1×10-5 A at −2 V.

Improved performance of GaAs radiation detectors with low ohmic contacts

1997 ◽  
Vol 44 (3) ◽  
pp. 943-949 ◽  
Author(s):  
F. Nava ◽  
G. Bertuccio ◽  
P. Vanni ◽  
M.E. Fantacci ◽  
C. Canali ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Radiation Detectors ◽  
Improved Performance

scholarly journals Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

2019 ◽  
Vol 68 (17) ◽  
pp. 178501
Author(s):  
Chen Wang ◽  
Yi-Hong Xu ◽  
Cheng Li ◽  
Hai-Jun Lin ◽  
Ming-Jie Zhao
Keyword(s):  
Ohmic Contact ◽  
Improved Performance ◽  
Annealing Method
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