Effects of Structural Modification and Some Parameters on Inverse Relaxation Behaviour of Polyvinyl Alcohol-Blended Polyester Yarn

2020 ◽  
Vol 101 (2) ◽  
pp. 185-192
Author(s):  
Arpita Kothari ◽  
S. K. Sinha ◽  
Arobindo Chatterjee
Tekstilec ◽  
2021 ◽  
Vol 64 (1) ◽  
pp. 47-54
Author(s):  
Madan Lal Regar ◽  
◽  
Akhtarul Islam Amjad ◽  
Shubham Joshi ◽  
◽  
...  

Yarns and fabrics can be improved through structural modifications. Using an organic solvent is a novel and popular approach for a structural modification in the field of textiles. In the present work, Siro-spun® and TFO (Two for one Twisters) polyester yarns were modified with a solvent-acid mixture of aceton and trichloroacetic acid : methylene chloride (TCAMC). Both types of yarn samples were treated in a relaxed state with various concentrations of the solvent’s mixture at room temperature. The influence of the treatment with respect to linear density and TCAMC concentration on mechanical properties was investigated. Modified yarns exhibited higher breaking elongation, improved abrasion resistance and lower tenacity. It was also found that the methods of yarn manufacturing contribute significantly to the tensile behaviour of modified yarns. The improvement in elongation was higher in the treated TFO yarn. The abrasion resistance index was found to be lower in the case of siro polyester yarns. Furthermore, significant mass loss in yarn was observed after the treatment of TCAMC.


Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.


2019 ◽  
Vol 5 (4) ◽  
pp. 56-63
Author(s):  
E.V. Dikhtiaruk ◽  
◽  
V.V. Paientko ◽  
A.K. Matkovsky ◽  
Yu.N. Nichiporuk ◽  
...  

2011 ◽  
Vol 3 (8) ◽  
pp. 91-93 ◽  
Author(s):  
Sindhu Honmute ◽  
◽  
Arunkumar Lagashetty ◽  
A. Venkataraman A. Venkataraman

2019 ◽  
Vol 41 (4) ◽  
pp. 246-252
Author(s):  
T.V. Dmytriieva ◽  
◽  
S.K. Krymovska ◽  
V.I. Bortnytskyi ◽  
S.M. Kobylinskyi ◽  
...  
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