Total Ionization Dose (TID) Effects on 2D MOS Devices

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

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Convergence Properties of Quasiclassical Trajectory Calculations on Dynamics of Autoionization Event in He(23S)-D2 Penning Ionization

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19970154 ◽

1997 ◽

Vol 62 (2) ◽

pp. 154-171 ◽

Cited By ~ 1

Author(s):

Jan Vojtík ◽

Richard Kotal

Keyword(s):

Branching Ratios ◽

Classical Trajectory ◽

Vibrational States ◽

Penning Ionization ◽

Trajectory Calculations ◽

Quantum Mechanical Treatment ◽

Total Ionization ◽

Vibrational Levels ◽

Degree Of Convergence ◽

Product Branching

An analysis of the degree of convergence of theoretical pictures of the dynamics of the autoionization event He(23S)-D2(v" = 0) -> [He...D2+(v')] + e is presented for a number of batches of Monte Carlo calculations differing in the number of the trajectories run. The treatment of the dynamics consists in 2D classical trajectory calculations based on static characteristics which include a quantum mechanical treatment of the perturbed D2(v" = 0) and D2+(v') vibrational motion. The vibrational populations are dynamical averages over the local widths of the He(23S)-D2(v" = 0) state with respect to autoionization to D2+(...He) in its v'th vibrational level and the Penning electron energies are related to the local differences between the energies of the corresponding perturbed D2(v" = 0)(...He*) and D2+(v')(...He) vibrational states. Special attention is paid to the connection between the requirements on the degree of convergence of the classical trajectory picture of the event and the purpose of the calculations. Information is obtained regarding a scale of the trajectory calculations required for physically sensible applications of the model to an interpretation of different type of experiments on the system: total ionization cross section measurements, Penning ionization electron spectra, subsequent 3D classical trajectory calculations of branching ratios of the products of the postionization collision process, and interpretation of electron ion coincidence measurements of the product branching ratios for individual vibrational levels of the nascent Penning ion.

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Characterization of Highly Irradiated ALPIDE Silicon Sensors

Universe ◽

10.3390/universe5040091 ◽

2019 ◽

Vol 5 (4) ◽

pp. 91

Author(s):

Valentina Raskina ◽

Filip Křížek

Keyword(s):

Nuclear Physics ◽

Detection Efficiency ◽

Tracking System ◽

Physics Institute ◽

Total Ionization ◽

Silicon Sensors ◽

Active Pixel ◽

Academy Of Sciences

The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in Řež. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm - 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.

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