ABSTRACTA calibration procedure for determining the model input parameters of standard a-Si:H layers, which comprise a single junction a-Si:H solar cell, is presented. The calibration procedure consists of: i) deposition of the separate layers, ii) measurement of the material properties, iii) fitting the model parameters to match the measured properties, iv) simulation of test devices and comparison with experimental results. The inverse modeling procedure was used to extract values of the most influential model parameters by fitting the simulated material properties to the measured ones. In case of doped layers the extracted values of the characteristic energies of exponentially decaying tail states are much higher than the values reported in literature. Using the extracted values of model parameters a good agreement between the measured and calculated characteristics of a reference solar cell was reached. The presented procedure could not solve directly an important issue concerning a value of the mobility gap in a-Si:H alloys.
