The direct observation of a cluster of screw dislocations in silicon carbide

1968 ◽  
Vol 2 (5) ◽  
pp. 322-323 ◽  
Author(s):  
Y. Inomata ◽  
H. Komatsu ◽  
M. Mitomo ◽  
Z. Inoue
Keyword(s):  
Silicon Carbide ◽  
Direct Observation ◽  
Screw Dislocations

scholarly journals Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles

2018 ◽  
Vol 122 (46) ◽  
pp. 26713-26721 ◽  
Author(s):  
David Beke ◽  
Anna Fučíková ◽  
Tibor Z. Jánosi ◽  
Gyula Károlyházy ◽  
Bálint Somogyi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Solid State ◽  
Direct Observation ◽  
Silicon Carbide Nanoparticles

An optical and X-ray topographic study of giant screw dislocations in silicon carbide

1985 ◽  
Vol 71 (1) ◽  
pp. 41-56 ◽  
Author(s):  
P. Krishna ◽  
S.-S. Jiang ◽  
A.R. Lang
Keyword(s):  
Silicon Carbide ◽  
Screw Dislocations ◽  
X Ray

X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in hexagonal silicon carbide

2001 ◽  
Vol 34 (1) ◽  
pp. 20-26 ◽  
Author(s):  
W. M. Vetter ◽  
M. Dudley
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
Basal Plane ◽  
High Density ◽  
Screw Dislocations ◽  
X Ray ◽  
Apparent Violation ◽  
Light Contrast

Contrast is associated with micropipes in X-ray topographs of SiC crystals obtained with prismatic reflections, representing an apparent violation of theg·b= 0 invisibility criterion. This is explained as a population of basal-plane dislocations with Burgers vectors of the setb= {\textstyle{1 \over 3}}〈11{\bar{2}}0〉 that occur in a high density within a few micrometers of the micropipes, below the resolution of X-ray topography. These basal-plane dislocations could be observed under an electron microscope. The presence of the surfaces of the micropipes influences the dislocation images in the topographs taken with prismatic reflections, often resulting in a band of light contrast along the axes of the micropipes.

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer

2008 ◽  
Vol 600-603 ◽  
pp. 301-304 ◽  
Author(s):  
Yi Chen ◽  
Ning Zhang ◽  
Xian Rong Huang ◽  
David R. Black ◽  
Michael Dudley
Keyword(s):  
Silicon Carbide ◽  
Grazing Incidence ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Screw Dislocations ◽  
X Ray ◽  
Pyramidal Plane

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.

Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers

2006 ◽  
Vol 527-529 ◽  
pp. 247-250
Author(s):  
Andrew J. Trunek ◽  
Philip G. Neudeck ◽  
David J. Spry
Keyword(s):  
Silicon Carbide ◽  
Defect Density ◽  
Patterned Substrates ◽  
Screw Dislocations ◽  
High Defect Density ◽  
Koh Etching

We report on further observations of homoepitaxially grown 4H silicon carbide (SiC) cantilevers on commercial on-axis mesa patterned substrates. Mesa shapes with hollow interiors were designed to significantly increase the ratio of dislocation-free cantilever area to pregrowth mesa area. Mesas that did not contain axial screw dislocations (SD’s) continued to expand laterally until uncontrolled growth in the trench regions rises up to interfere / merge with the laterally expanding cantilevers. Molten KOH etching revealed high defect density in regions where trench growth merged with the laterally expanding cantilevers. The remaining portions of the cantilevers, except for central coalescence points, remained free of dislocations.

scholarly journals Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography

2009 ◽  
Vol 615-617 ◽  
pp. 251-254 ◽  
Author(s):  
Ryohei Tanuma ◽  
Tae Tamori ◽  
Yoshiyuki Yonezawa ◽  
Hirotaka Yamaguchi ◽  
Hirofumi Matsuhata ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Strain Field ◽  
Three Dimensional ◽  
Strain Analysis ◽  
Hollow Core ◽  
Screw Dislocations ◽  
X Ray ◽  
Microplasma Breakdown ◽  
Symmetry Break

This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam three-dimensional topography. Strain analysis shows that typical screw dislocations having a symmetric strain field tend to cause microplasma breakdown, whereas deformed SDs do not. The symmetry break in SDs will relax the focussing of strain and lessen the formation of defects, thereby leading to the desirable non-leak property.

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