Interface Strengthening of α-Mg/C14–Mg2Ca Eutectic Alloy

This study investigates the effect of the α/C14 interface on the creep strength of α-Mg/C14–Mg2Ca eutectic alloy at 473 K under a stress of 40 MPa. The α/C14 interface is composed of terraces and steps, with terraces parallel to the (1101)α pyramidal plane of the α-Mg lamellae and to the (1120)C14 columnar plane of the C14–Mg2Ca lamellae. The creep curves of the alloy exhibit three stages: a normal transient creep stage, a minimum creep rate stage, and an accelerating stage. The minimum creep rate is proportional to the lamellar spacing, indicating that the α/C14 lamellar interface plays a creep-strengthening role. In the high-resolution transmission electron microscopy image captured of the specimen after the creep test, <a> dislocations can be mainly seen within the soft α-Mg lamellae, and they are randomly distributed at the α/C14 interface. In contrast, dislocations are rarely introduced in the hard C14–Mg2Ca lamellae. It is deduced that the α/C14 interface presents a barrier to dislocation gliding within the α-Mg lamellae and does not help rearrange the dislocations.

CRSS of Mg-X(X=Zn, Y) Binary Solid Solution via First-Principles Study

To investigate the deformation behavior of Mg-X(X=Zn, Y) binary solid solution, the strain-stress curve of crystal cell along [0001] for Mg-1.85at.%X(X=Zn, Y) alloy were simulated using first-principles calculations in this study. The simulation presents directly the critical resolved shear stress for pyramidal plane slip systems for Mg-1.85at.%X(X=Zn, Y) alloy. The results show that the minimum critical resolved shear stress (CRSS) of Mg, Mg-1.85at. %Zn and Mg-1.85at. %Y for pyramidal plane slip systems is 2.24, 2.72, 2.96 GPa respectively.

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

Relationship between the chemical reactivity and the orientation of SiC substrates was investigated. Thermal etching of 4H-SiC in the mixed gas of oxygen and chlorine was carried out as the chemical reaction. The etching rate did not change monotonously with the increase of the off angle in 4H-SiC (000-1) C substrate. By the use of such tendency in the thermal etching, the three dimensional structure with the specific pyramidal plane was able to be obtained.

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.

TEM of C-component Dislocations Associated with Pyramidal Slip Activity in Hexagonal α2-Ti3Al

While only a minor phase constituent, the deformation behavior of the hexagonal α2-Ti3Al phase, significantly affects the mechanical properties of two-phase TiAl based alloys. We have used conventional and high-resolution transmission electron microscopy to investigate the fine structure of pyramidal plane glide dislocations, with Burgers vectors of the type b=<2c+a>, in α2-Ti3Al after room temperature compression of binary polysynthetically twinned TiAl normal to the lamellar interfaces to nominal plastic strains of 1%-7%. We report atomic resolution observations of non-co-planar dislocation core configurations for <2c+a>-dislocations and show that translamellar deformation twins active in the majority γ-TiAl phase play an important role in facilitating pyramidal plane slip in α2-Ti3Al in the lamellar two-phase alloys.