High gas pressure crystal growth of antimony sulpho-iodide, nickel carbonate and black phosphorus

1972 ◽  
Vol 12 (2) ◽  
pp. 113-119 ◽  
Author(s):  
S.S. Boksha
Keyword(s):  
Crystal Growth ◽  
Black Phosphorus ◽  
Gas Pressure ◽  
Nickel Carbonate

scholarly journals Addition to New Strategy for Black Phosphorus Crystal Growth through Ternary Clathrate

2018 ◽  
Vol 18 (7) ◽  
pp. 4206-4206 ◽  
Author(s):  
Sheng Li ◽  
Xiaoyuan Liu ◽  
Xing Fan ◽  
Yizhou Ni ◽  
John Miracle ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Black Phosphorus ◽  
New Strategy

Single crystal growth of HgBaCaCuO and infinite layer CaCuO2 at high gas pressure

1994 ◽  
Vol 235-240 ◽  
pp. 917-918 ◽  
Author(s):  
J. Karpinski ◽  
I. Mangelschots ◽  
H. Schwer ◽  
K. Conder ◽  
A. Morawski ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Gas Pressure ◽  
Infinite Layer

Synthesis, Crystal Growth and Epitaxial Layers Growth of FeSe0,88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System

2009 ◽  
Vol 22 (6) ◽  
pp. 599-602 ◽  
Author(s):  
O. Tkachenko ◽  
A. Morawski ◽  
A. J. Zaleski ◽  
P. Przyslupski ◽  
T. Dietl ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Gas Pressure ◽  
Epitaxial Layers ◽  
Trap System

scholarly journals New Strategy for Black Phosphorus Crystal Growth through Ternary Clathrate

2017 ◽  
Vol 17 (12) ◽  
pp. 6579-6585 ◽  
Author(s):  
Sheng Li ◽  
Xiaoyuan Liu ◽  
Xing Fan ◽  
Yizhou Ni ◽  
John Miracle ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Black Phosphorus ◽  
New Strategy

High gas pressure crystal growth and properties of HgBa2Can−1CunO2n+2+δ, Sr0.73CuO2 and CaxA1−xCuO2

1997 ◽  
Vol 282-287 ◽  
pp. 77-80 ◽  
Author(s):  
J. Karpinski ◽  
H. Schwer ◽  
E. Kopnin ◽  
R. Molinski ◽  
G.I. Meijer ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Gas Pressure

Measurement of Ultrasound Velocity in the Single Crystal of Black Phosphorus up to 3.3 GPa Gas Pressure

1991 ◽  
Vol 60 (5) ◽  
pp. 1612-1618 ◽  
Author(s):  
Yasushi Kôzuki ◽  
Yoichi Hanayama ◽  
Masaki Kimura ◽  
Teruo Nishitake ◽  
Shoichi Endo
Keyword(s):  
Single Crystal ◽  
Ultrasound Velocity ◽  
Black Phosphorus ◽  
Gas Pressure

Crystal growth of Hg-Fe-Te alloys under high gas pressure

1991 ◽  
Vol 7 (1-6) ◽  
pp. 307-309
Author(s):  
J. Jun ◽  
M. C. Record ◽  
G. Brun ◽  
I. Grzegory ◽  
J. C. Tedenac
Keyword(s):  
Crystal Growth ◽  
Gas Pressure

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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