Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2gas mixture at 350 °C

1994 ◽  
Vol 64 (14) ◽  
pp. 1865-1867 ◽  
Author(s):  
Toshiki Kaneko ◽  
Masatoshi Wakagi ◽  
Ken‐ichi Onisawa ◽  
Tetsuroh Minemura
Carbon ◽  
2004 ◽  
Vol 42 (14) ◽  
pp. 2867-2872 ◽  
Author(s):  
Jianjun Wang ◽  
Mingyao Zhu ◽  
Ron A. Outlaw ◽  
Xin Zhao ◽  
Dennis M. Manos ◽  
...  

2001 ◽  
Vol 50 (7) ◽  
pp. 1264
Author(s):  
CHEN XIAO-HUA ◽  
WU GUO-TAO ◽  
DENG FU-MING ◽  
WANG JIAN-XIONG ◽  
YANG HANG-SHENG ◽  
...  

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