Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

1991 ◽  
Vol 115 (1-4) ◽  
pp. 648-651 ◽  
Author(s):  
Hiroshi Murakami ◽  
Tsunemori Asahi ◽  
Hiroshi Amano ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3381-3384 ◽  
Author(s):  
Masaya Shimizu ◽  
Yasutoshi Kawaguchi ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

2018 ◽  
Vol 482 ◽  
pp. 1-8 ◽  
Author(s):  
Xu Yang ◽  
Shugo Nitta ◽  
Kentaro Nagamatsu ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Pulsed Mode

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

scholarly journals Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

2019 ◽  
Vol 12 (11) ◽  
pp. 111004 ◽  
Author(s):  
Praneeth Ranga ◽  
Ashwin Rishinaramangalam ◽  
Joel Varley ◽  
Arkka Bhattacharyya ◽  
Daniel Feezell ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (2) ◽  
pp. 555-559 ◽  
Author(s):  
Masahiro Araki ◽  
Noriaki Mochimizo ◽  
Katsuyuki Hoshino ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Direct Growth

Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

1993 ◽  
Vol 74 (2) ◽  
pp. 1327-1330 ◽  
Author(s):  
Naoki Hara ◽  
Kazushige Shiina ◽  
Tatsuya Ohori ◽  
Kazumi Kasai ◽  
Junji Komeno
Keyword(s):  
Vapor Phase ◽  
Lateral Diffusion ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Si Doped

Growth and Characterization of Epitaxial InN Films on Sapphire Substrate using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7284-7289 ◽  
Author(s):  
Ashraful Ghani Bhuiyan ◽  
Tatsuya Tanaka ◽  
Ken Kasashima ◽  
Akihiro Hashimoto ◽  
Akio Yamamoto
Keyword(s):  
Excimer Laser ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Arf Excimer Laser
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