Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (2) ◽  
pp. 555-559 ◽  
Author(s):  
Masahiro Araki ◽  
Noriaki Mochimizo ◽  
Katsuyuki Hoshino ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Direct Growth

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3381-3384 ◽  
Author(s):  
Masaya Shimizu ◽  
Yasutoshi Kawaguchi ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

2018 ◽  
Vol 482 ◽  
pp. 1-8 ◽  
Author(s):  
Xu Yang ◽  
Shugo Nitta ◽  
Kentaro Nagamatsu ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Pulsed Mode

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

Growth and Characterization of Epitaxial InN Films on Sapphire Substrate using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7284-7289 ◽  
Author(s):  
Ashraful Ghani Bhuiyan ◽  
Tatsuya Tanaka ◽  
Ken Kasashima ◽  
Akihiro Hashimoto ◽  
Akio Yamamoto
Keyword(s):  
Excimer Laser ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Arf Excimer Laser

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

2002 ◽  
Vol 81 (4) ◽  
pp. 652-654 ◽  
Author(s):  
T. Onuma ◽  
S. F. Chichibu ◽  
T. Sota ◽  
K. Asai ◽  
S. Sumiya ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

1991 ◽  
Vol 115 (1-4) ◽  
pp. 648-651 ◽  
Author(s):  
Hiroshi Murakami ◽  
Tsunemori Asahi ◽  
Hiroshi Amano ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped
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