Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers

1994 ◽  
Vol 143 (1-2) ◽  
pp. 7-14 ◽  
Author(s):  
K. Streubel ◽  
J. Wallin ◽  
G. Landgren ◽  
U. Öhlander ◽  
S. Lourdudoss ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

1991 ◽  
Vol 59 (4) ◽  
pp. 405-407 ◽  
Author(s):  
D. Coblentz ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
A. M. Sergent ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Multiple Quantum
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