Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

1996 ◽  
Vol 158 (1-2) ◽  
pp. 28-36 ◽  
Author(s):  
N.Y. Jin-Phillipp ◽  
F. Phillipp ◽  
T. Marschner ◽  
W. Stolz ◽  
E.O. Göbel
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