Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
1996 ◽
Vol 158
(1-2)
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pp. 28-36
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2004 ◽
Vol 260
(3-4)
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pp. 360-365
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2006 ◽
Vol 290
(1)
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pp. 11-17
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1997 ◽
Vol 148-149
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pp. 122-128
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2012 ◽
Vol 30
(6)
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pp. 061510
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2002 ◽
Vol 82
(4)
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pp. 735-749
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1996 ◽
Vol 74
(2)
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pp. 57-66
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