Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

2004 ◽  
Vol 260 (3-4) ◽  
pp. 360-365 ◽  
Author(s):  
Shigeyasu Tanaka ◽  
Yoshio Honda ◽  
Norifumi Kameshiro ◽  
Ryuta Iwasaki ◽  
Nobuhiko Sawaki ◽  
...  
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