Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy
2004 ◽
Vol 260
(3-4)
◽
pp. 360-365
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1996 ◽
Vol 158
(1-2)
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pp. 28-36
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2001 ◽
Vol 309-310
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pp. 468-472
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2000 ◽
Vol 220
(4)
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pp. 379-383
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2006 ◽
Vol 15
(4-8)
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pp. 460-464
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2002 ◽
Vol 41
(Part 2, No. 7B)
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pp. L846-L848
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1997 ◽
Vol 148-149
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pp. 122-128
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2012 ◽
Vol 30
(6)
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pp. 061510
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