High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates

High Electron ◽

High Electron Mobility ◽

Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates

Chinese Physics Letters ◽

10.1088/0256-307x/23/3/048 ◽

2006 ◽

Vol 23 (3) ◽

pp. 697-700 ◽

Cited By ~ 3

Author(s):

Huang Ying-Long ◽

Ma Long ◽

Yang Fu-Hua ◽

Wang Liang-Chen ◽

Zeng Yi-Ping

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Resonant Tunnelling ◽

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) ◽

Characteristics of highly strained InGaP/InGaAs pseudomorphic high electron mobility transistors grown on patterned GaAs substrates

10.1109/iscs.2000.947179 ◽

2002 ◽

Author(s):

Sang-Soon Kim ◽

Sung-June Jo ◽

Jong-In Song

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Highly Strained

Fabrication of 45 nm high In component metamorphic In 0.7 Ga 0.3 As/In 0.6 Ga 0.4 As composite‐channel high electron‐mobility transistors on GaAs substrates

Electronics Letters ◽

10.1049/el.2015.2126 ◽

2016 ◽

Vol 52 (4) ◽

pp. 318-319

Author(s):

Weihua Kang ◽

Xiaodong Zhang ◽

Xian Ji ◽

Yong Cai ◽

Jiahui Zhou ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

Applied Physics Letters ◽

10.1063/1.1396625 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1909-1911 ◽

Cited By ~ 1

Author(s):

C. P. Jiang ◽

Z. M. Huang ◽

S. L. Guo ◽

J. H. Chu ◽

L. J. Cui ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates

Journal of The Electrochemical Society ◽

10.1149/1.2352047 ◽

2006 ◽

Vol 153 (12) ◽

pp. G1005 ◽

Cited By ~ 15

Author(s):

Yu-Shyan Lin ◽

Bo-Yuan Chen

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Comprehensive Characterization

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Oxide Electrodes

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si