Properties of amorphous silicon nitride films prepared at high deposition rate

1985 ◽  
Vol 77-78 ◽  
pp. 941-944 ◽  
Author(s):  
Yoshiki Nishibayashi ◽  
Takeshi Imura ◽  
Yukio Osaka
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate

1985 ◽  
Vol 24 (Part 2, No. 6) ◽  
pp. L469-L471 ◽  
Author(s):  
Yoshiki Nishibayashi ◽  
Takeshi Imura ◽  
Yukio Osaka ◽  
Kiyoshi Shizuma ◽  
Fumitaka Nishiyama
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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