Sensitization of the 1.54μm Er emission in amorphous silicon nitride films

2009 ◽  
Author(s):  
Selcuk Yerci ◽  
Rui Li ◽  
Soumendra N. Basu ◽  
Luca Dal Negro
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Energy transfer and 1.54 μm emission in amorphous silicon nitride films

2009 ◽  
Vol 95 (3) ◽  
pp. 031107 ◽  
Author(s):  
S. Yerci ◽  
R. Li ◽  
S. O. Kucheyev ◽  
T. van Buuren ◽  
S. N. Basu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

Oxygenated and Fluorinated Amorphous Silicon Nitride Films and their Use in Thin Film Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
P. K. Bhat ◽  
H. Ogura ◽  
A. Madan
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Silicon Oxynitride ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Insulator Film

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

Sign in / Sign up

Export Citation Format

Share Document