Two types of charge carriers in the high-Tc cuprates

1995 ◽  
Vol 56 (12) ◽  
pp. 1691-1692
Author(s):  
J. Ashkenazi
2021 ◽  
Vol 5 (3) ◽  
pp. 183-191
Author(s):  
S. Dzhumanov ◽  
Sh.R. Malikov ◽  
Sh.S. Djumanov

The intrinsic mechanisms of the unusual metallic transports of three types of relevant charge carriers (large polarons, excited (dissociated) polaronic components of bosonic Cooper pairs and bosonic Cooper pairs themselves) along the CuO2 layers of high-Tc cuprates are identified and the new features of metallic conductivity in the CuO2 layers (i.e. ab -planes) of underdoped and optimally doped cuprates are explained. The in-plane conductivity of high-Tc cuprates is associated with the metallic transports of such charge carriers at their scattering by lattice vibrations in thin CuO2 layers. The proposed charge transport theory in high-Tc cuprates allows to explain consistently the distinctive features of metallic conductivity and the puzzling experimental data on the temperature dependences of their in-plane resistivity pab. In underdoped and optimally doped cuprates the linear temperature dependence of pab(T) above the pseudogap formation temperature T∗ is associated with the scattering of polaronic carriers at acoustic and optical phonons, while the different (upward and downward) deviations from the linearity in pab(T) below T∗ are caused by the pseudogap effect on the conductivity of the excited Fermi components of bosonic Cooper pairs and by the dominating conductivity of bosonic Cooper pairs themselves in the normal state of these high-Tc materials.


2020 ◽  
Vol 5 (1) ◽  
pp. 12
Author(s):  
Pieralberto Marchetti

We show that we can interpret the exact solution of the one-dimensional t-J model in the limit of small J in terms of charge carriers with both exchange (braid) and exclusion (Haldane) statistics with parameter 1/2. We discuss an implementation of the same statistics in the two-dimensional t-J model, emphasizing similarities and differences with respect to one dimension. In both cases, the exclusion statistics is a consequence of the no-double occupation constraint. We argue that the application of this formalism to hole-doped high Tc cuprates and the derived composite nature of the hole give a hint to grasp many unusual properties of these materials.


1992 ◽  
Vol 06 (10) ◽  
pp. 555-571 ◽  
Author(s):  
J. MANNHART

By changing the concentration of mobile charge carriers, applied electric fields influence the transport properties of high-T c superconductors in the superconducting state. Experimental studies of these effects are briefly reviewed.


2005 ◽  
Vol 66 (8-9) ◽  
pp. 1392-1394
Author(s):  
Takashi Yanagisawa ◽  
Mitake Miyazaki ◽  
Kunihiko Yamaji

Science ◽  
1999 ◽  
Vol 283 (5398) ◽  
pp. 49-52 ◽  
Author(s):  
D. N. Basov
Keyword(s):  
High Tc ◽  

2002 ◽  
Vol 377 (4) ◽  
pp. 531-537 ◽  
Author(s):  
Fu-sui Liu ◽  
Wan-fang Chen
Keyword(s):  
High Tc ◽  

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