Comment on the intensity and the temperature dependence of the nitrogen-broadened half-width of the P(6) line in the CO fundamental

1981 ◽  
Vol 25 (2) ◽  
pp. 187-188 ◽  
Author(s):  
Prasad Varanasi
Keyword(s):  
Temperature Dependence ◽  
Half Width

Temperature dependence of the 1555 cm−1 infrared absorption band in liquid D2O: inflection points

1970 ◽  
Vol 48 (24) ◽  
pp. 3790-3796 ◽  
Author(s):  
R. Oder ◽  
D. A. I. Goring
Keyword(s):  
Absorption Band ◽  
Temperature Dependence ◽  
Temperature Interval ◽  
Infrared Absorption ◽  
Structural Changes ◽  
Peak Height ◽  
Half Width ◽  
Combination Band ◽  
Infrared Absorption Band ◽  
Inflection Points

The temperature dependence curves of the peak height, frequency, and half-width of the infrared intermolecular combination band absorbing at 1555 cm−1 in liquid D2O has been observed to behave sigmoidally between 5 and 70 °C. No evidence of sharp discontinuities has been obtained but inflection points in the rather broad temperature interval of about 25 to 40 °C have been observed. Results are discussed in terms of structural changes occurring in the liquid.

scholarly journals Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals

2019 ◽  
Vol 64 (2) ◽  
pp. 173
Author(s):  
O. O. Gomonnai ◽  
M. Ludemann ◽  
A. V. Gomonnai ◽  
I. Yu. Roman ◽  
A. G. Slivka ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Phase Transformations ◽  
Single Crystals ◽  
Raman Spectra ◽  
Temperature Interval ◽  
Half Width ◽  
Vibrational Band ◽  
Temperature Behavior ◽  
Frequency Interval ◽  
Temperature Range

The unpolarized Raman spectra of TlIn(S0.95Se0.05)2 single crystals in the frequency interval 16–340 cm−1 are studied in the temperature interval 30 ≤ T ≤ 293 K. The Raman spectra are analyzed by a multipeak simulation using Lorentzian contours. The temperature behavior of the vibrational band parameters (half-width, intensity, and frequency) is studied with the emphasis on the temperature range, where changes related to phase transformations are revealed.

Half-width temperature dependence of nitrogen broadened lines in the ν2 band of H2O

2004 ◽  
Vol 224 (2) ◽  
pp. 164-175 ◽  
Author(s):  
A.D. Bykov ◽  
N.N. Lavrentieva ◽  
V.N. Saveliev ◽  
L.N. Sinitsa ◽  
C. Camy-Peyret ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Half Width

TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1436-1442 ◽  
Author(s):  
Konrad Colbow ◽  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

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