TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1436-1442 ◽  
Author(s):  
Konrad Colbow ◽  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

scholarly journals INFRARED ABSORPTION LINES IN BORON-DOPED SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1801-1822 ◽  
Author(s):  
Konrad Colbow
Keyword(s):  
Experimental Data ◽  
Excited States ◽  
Ground State ◽  
Half Width ◽  
Stark Broadening ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance ◽  
Internal Strains

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground state to excited states. This leads to a line spectrum. Because of a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave a misleading picture of the low-temperature half-width, the temperature dependence of this half-width, and the onset of concentration broadening at low temperatures.New experimental data are presented and explained by introducing the mechanism of statistical Stark broadening due to ionized impurities, and by modifying Baltensperger's (1953) theory for concentration broadening. At low impurity concentration the width is attributed to phonon broadening (Barrie and Nishikawa 1963) and internal strains (Kohn 1957).

ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2797-2804 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Line Broadening ◽  
Additional Information ◽  
Boron Doped ◽  
Doped Silicon ◽  
Time Part ◽  
Width Measurements ◽  
First Time

In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow (1963) separated the various line-broadening contributions for the first time. Part of Colbow's half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of "strain-free" mounted boron-doped silicon are presented, Colbow's work is corrected, and additional information regarding the various broadening contributions is given.

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

2010 ◽  
Vol 81 (2) ◽  
Author(s):  
C. Marcenat ◽  
J. Kačmarčík ◽  
R. Piquerel ◽  
P. Achatz ◽  
G. Prudon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Wafers ◽  
Superconducting Phase ◽  
Silicon Films ◽  
Temperature Transition ◽  
Boron Doped ◽  
Doped Silicon

Low temperature measurements of the dielectric constant and loss of boron doped silicon

1994 ◽  
Vol 194-196 ◽  
pp. 1079-1080
Author(s):  
R.D. Biggar ◽  
K.R. Lane ◽  
J.M. Parpia
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Temperature Measurements ◽  
Boron Doped ◽  
Dielectric Constant And Loss ◽  
Doped Silicon

Boron-Related Defects in Low Temperature Irradiated Silicon

2015 ◽  
Vol 242 ◽  
pp. 285-289 ◽  
Author(s):  
Ludmila Khirunenko ◽  
Mikhail Sosnin ◽  
Andrei Duvanskii ◽  
N.V. Abrosimov ◽  
Helge Riemann
Keyword(s):  
Low Temperature ◽  
Interstitial Oxygen ◽  
Boron Doped ◽  
Absorption Studies ◽  
Doped Silicon

The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one another and with atoms of interstitial oxygen was revealed. For as-irradiated samples we observed the appearance of three LVMs at 739.4, 759.6, and 780.9 cm-1, which are attributed to BiBi complex, and the LVM at 923.5 cm-1, which are identified as BiOi complex.

Temperature dependence of the half-width of the 2.3 eV optical absorption band in neutron-irradiated ZnS

1976 ◽  
Vol 35 (1) ◽  
pp. K57-K60 ◽  
Author(s):  
K. Matsuura ◽  
S. Teratani ◽  
S. Kishida ◽  
I. Tsurumi
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Half Width ◽  
Optical Absorption Band

Temperature dependence of hydrogen vibrational modes in passivated boron‐doped silicon

1987 ◽  
Vol 51 (18) ◽  
pp. 1413-1415 ◽  
Author(s):  
M. Stutzmann ◽  
C. P. Herrero
Keyword(s):  
Temperature Dependence ◽  
Vibrational Modes ◽  
Boron Doped ◽  
Doped Silicon

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

2017 ◽  
Vol 7 (6) ◽  
pp. 1693-1700 ◽  
Author(s):  
Young-Joon Han ◽  
Evan Franklin ◽  
Daniel Macdonald ◽  
Hieu T. Nguyen ◽  
Di Yan
Keyword(s):  
Low Temperature ◽  
Density Profiles ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Optical Spectroscopy of Li6Y(BO3)3 Single Crystals Doped with Dysprosium

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 503
Author(s):  
Éva Tichy-Rács ◽  
Ivo Romet ◽  
László Kovács ◽  
Krisztián Lengyel ◽  
Gábor Corradi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Single Crystals ◽  
Crystal Field ◽  
Excited States ◽  
Ground State ◽  
Energy Levels ◽  
Luminescence Spectroscopy ◽  
Wide Spectral Range ◽  
Low Symmetry

The energy levels of Dy3+ ions have been determined in lithium yttrium borate (Li6Y(BO3)3) single crystals in a wide spectral range between 3000 and 40,000 cm−1 using optical absorption and luminescence spectroscopy, which also allow for an analysis of the ground state. The crystal field splittings of the 6H15/2 ground state and all excited states up to the 4F7/2 manifold were obtained at a low temperature, based on luminescence (T = 4.2–78 K) and absorption (T = 8–100 K) measurements, respectively. The numbers of experimentally observed Stark sublevels are in agreement with those expected theoretically for Dy3+ ions occupying a single low symmetry (C1) site.

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