Influence of temperature on the transition of deformation characteristics of Al1Mg alloy in the power law creep regime

1985 ◽  
Vol 75 (1-2) ◽  
pp. 21-28 ◽  
Author(s):  
Hiroshi Oikawa ◽  
Hiroyuki Sato ◽  
Kouichi Maruyama
1992 ◽  
Vol 33 (12) ◽  
pp. 1182-1184 ◽  
Author(s):  
Yukio Ishikawa ◽  
Kouichi Maruyama ◽  
Hiroshi Oikawa

Metals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 813 ◽  
Author(s):  
Michael Kassner

This study determines the feasibility of describing the flow stress within the five-power-law creep regime, using a linear superposition of a dislocation hardening term and a significant solute strengthening term. It is assumed that the solutes are randomly distributed. It was found that by using an energy balance approach, the flow stress at high temperatures can be well-described by the classic Taylor equation with a solute strengthening term, τo, that is added to the αMGbρ1/2 dislocation hardening term.


Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).


2010 ◽  
Vol 25 (1) ◽  
pp. 93-105 ◽  
Author(s):  
Daniel Żarski ◽  
Dariusz Kucharczyk ◽  
Wojciech Sasinowski ◽  
Katarzyna Targońska ◽  
Andrzej Mamcarz

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