A calculation of some ΔK = ±2 band-mixing effects in the odd-mass nucleus W183

1965 ◽  
Vol 61 (1) ◽  
pp. 1-12 ◽  
Author(s):  
D.J. Rowe
Keyword(s):  
Mixing Effects ◽  
Band Mixing ◽  
Mass Nucleus

Atomistic analysis of localisation and band mixing effects in Gel-ϰC,Sn)ϰ group-IV alloys

2018 ◽  
Author(s):  
Christopher A. Broderick ◽  
Michael D. Dunne ◽  
Daniel S. P. Tanner ◽  
Amy C. Kirwanv ◽  
Edmond J. O'Halloranl ◽  
...  
Keyword(s):  
Group Iv ◽  
Mixing Effects ◽  
Band Mixing

STRAIN-INDUCED BAND-MIXING EFFECTS IN ZnS/CdS (001) SUPERLATTICES

2008 ◽  
Vol 22 (12) ◽  
pp. 1997-2008
Author(s):  
NACIR TIT ◽  
ALTYNBEK MURAT
Keyword(s):  
Tight Binding ◽  
Interface State ◽  
High Energy ◽  
Hole State ◽  
Type I ◽  
Substrate Composition ◽  
Radiative Efficiency ◽  
Mixing Effects ◽  
Ultraviolet Spectral Region ◽  
Band Mixing

The electronic properties of ZnS/CdS (001) superlattices (SLs) are investigated using the sp3s* tight-binding method versus substrate composition and valence-band offset (VBO). The results show that the electron is always confined within the CdS slabs; and also show a more striking feature due to the prominent localization of the top hole state near the interface region independently from the substrate composition (strain state). Theoretically, we have varied the VBO and inspected its effect on the interface state, and found that this latter persists to exist for VBO values within the interval [-1.4 eV, 0.6 eV]. This interface state is a manifestation of strong band mixing effects induced by the biaxial strain, and is expected to enhance the radiative efficiency of the SLs. The modelling of some available PL data, obtained for thin CdS quantum well embedded inside ZnS , has shown that the samples are of type-I with high energy bandgaps lying within the blue to ultraviolet spectral region.

Band mixing effects on quantum well gain

1987 ◽  
Vol 23 (6) ◽  
pp. 960-968 ◽  
Author(s):  
S. Colak ◽  
R. Eppenga ◽  
M. Schuurmans
Keyword(s):  
Quantum Well ◽  
Mixing Effects ◽  
Band Mixing

Valence-band mixing effects on hole oscillations in coupled quantum wells

1993 ◽  
Vol 47 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
C. Juang ◽  
P. A. Chen ◽  
C. Y. Chang
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Coupled Quantum Wells ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Direct Observation of Valence-Band Mixing in GaAs/GaPAs Strained-Layer Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
E. D. Jones ◽  
R. M. Biefeld ◽  
I. J. Fritz ◽  
P. L. Gourley ◽  
G. C. Osbourn ◽  
...  
Keyword(s):  
Valence Band ◽  
Direct Observation ◽  
Experimental Studies ◽  
Biaxial Compression ◽  
Strained Layer ◽  
Mixing Effects ◽  
Strained Layer Superlattice ◽  
Band Mixing ◽  
Valence Bands ◽  
Valence Band Mixing

ABSTRACTLow-temperature magneto-luminescence studies are used to examine the in-plane valence-band dispersion in GaAs/GaPAs strained-layer-superlattice structures. The results provide a direct observation of valence-band mixing effects in strained-layer systems.Theoretical and experimental studies of the effect of valence-band mixing upon the magneto-transport properties and magneto-luminescence data for GaAs/AlGaAs latticed-matched superlattices have been recently reported.[1–] Due to the presence of the 2D-quantum well, the valence-band degeneracy between the light-hole and heavy-hole bands at is removed. These studies show, however, that the lowest energy valence-band mass is still strongly dependent upon due to valence-band mixing. On the other hand, because of the large biaxial compression in strained-layer-super lattices (SLS), valence-band mixing effects should be minimal.[8–9] Recent magneto-transport measurements[10] on p-type InGaAs/GaAs SLS structures have provided information regarding nonparabolic valence-bands in these structures.

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