scholarly journals Donor impurity-related optical absorption spectra in GaAs-Ga1–xAlxAs quantum wells: hydrostatic pressure andΓ –X conduction band mixing effects

2007 ◽  
Vol 4 (2) ◽  
pp. 418-420 ◽  
Author(s):  
M. E. Mora-Ramos ◽  
S. Y. López ◽  
C. A. Duque ◽  
V. R. Velasco
Keyword(s):  
Hydrostatic Pressure ◽  
Optical Absorption ◽  
Quantum Wells ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Optical Absorption Spectra ◽  
Donor Impurity ◽  
Mixing Effects ◽  
Band Mixing

A photoconductivity study of trapped electrons in γ-irradiated hydrocarbon glasses at 77 K

1983 ◽  
Vol 61 (12) ◽  
pp. 2799-2803 ◽  
Author(s):  
Naoto Okabe ◽  
Toyoaki Kimura ◽  
Kenji Fueki
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Ground State ◽  
Volume Ratio ◽  
Optical Absorption Spectra ◽  
Trapped Electrons ◽  
Trapped Electron

Photoconductivity spectra of trapped electrons in γ-irradiated 3-methylpentane, 2-methylpentane, 3-methylheptane, and 3-methylpentane–methylcyclohexane (1:9 volume ratio) glasses at 77 K were measured. From the comparison of photoconductivity and optical absorption spectra in these systems we have obtained relative values of quantum efficiencies for a trapped electron in the ground state to be excited to the conduction band by photo-induced transition. For electrons stably trapped, we have measured the ranges of trap depths from the shallowest to the deepest in these systems.

OPTICAL ABSORPTION SPECTRA RELATED TO DONOR IMPURITIES IN GaAs/Ga1-xAlxAs RIDGE QUANTUM WIRE

2009 ◽  
Vol 23 (30) ◽  
pp. 3677-3685 ◽  
Author(s):  
R. KHORDAD ◽  
A. R. BIJANZADEH
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Quantum Wire ◽  
Impurity Band ◽  
Variational Procedure ◽  
Optical Absorption Spectra ◽  
Donor Impurity ◽  
Mass Approximation ◽  
Different Dimensions ◽  
Valence Level

The optical absorption spectra associated with transitions between the n = 1 valence level and the donor-impurity band in a V-groove GaAs / Ga 1-x Al x As quantum wire is calculated using a variational procedure within the effective mass approximation. Results are obtained for different dimensions of ridge quantum wire.

On the Origin of EL2 Intracenter Absorption Band in GaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
M. Skowronski
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Metastable State ◽  
Uniaxial Stress ◽  
Alternative Interpretation ◽  
Optical Absorption Spectra ◽  
Wide Absorption Band ◽  
Dx Center

ABSTRACTAn alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.

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