Optically pumped laser action in perchloryl fluoride

1980 ◽  
Vol 34 (3) ◽  
pp. 434-438 ◽  
Author(s):  
H.N. Rutt
Keyword(s):  
Laser Action ◽  
Optically Pumped ◽  
Optically Pumped Laser ◽  
Perchloryl Fluoride

Optically pumped laser action in dideuteroacetylene

1978 ◽  
Vol 26 (3) ◽  
pp. 422-426 ◽  
Author(s):  
H.N. Rutt ◽  
J.M. Green
Keyword(s):  
Laser Action ◽  
Optically Pumped ◽  
Optically Pumped Laser

scholarly journals Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

2007 ◽  
Vol 112 (2) ◽  
pp. 467-472
Author(s):  
H. Teisseyre ◽  
M. Szymański ◽  
A. Khachapuridze ◽  
C. Skierbiszewski ◽  
A. Feduniewicz-Żmuda ◽  
...  
Keyword(s):  
Laser Action ◽  
Crystallographic Direction ◽  
Optically Pumped ◽  
Optically Pumped Laser

CW optically pumped laser action in D<inf>2</inf>CO, HD CO, and (H<inf>2</inf>CO)<inf>3</inf>

1977 ◽  
Vol 13 (9) ◽  
pp. 730-731 ◽  
Author(s):  
D. Dangoisse ◽  
A. Deldalle ◽  
J. Splingard ◽  
J. Bellet
Keyword(s):  
Laser Action ◽  
Optically Pumped ◽  
Optically Pumped Laser

Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE

1982 ◽  
Vol 18 (2) ◽  
pp. 62 ◽  
Author(s):  
H. Asahi ◽  
Y. Kawamura ◽  
H. Nagai ◽  
T. Ikegami
Keyword(s):  
Laser Action ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

scholarly journals GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors

1998 ◽  
Vol 3 ◽  
Author(s):  
O. Schoen ◽  
D. Schmitz ◽  
M. Heuken ◽  
Holger Juergensen ◽  
M. D. Bremser
Keyword(s):  
State Of The Art ◽  
Laser Action ◽  
Optically Pumped ◽  
Free Electrons ◽  
Optically Pumped Laser ◽  
Wavelength Standard ◽  
Device Structures ◽  
Layer Resistance ◽  
Better Than

Using optimised growth processes for an AIX 2000 HT Planetary® Reactor a high material quality and high potential device yield are demonstrated. Doping levels for GaN single layers from 1·1020 cm−3 free electrons to semi-insulating to 1·1018 cm−3 free holes with state-of-the-art layer resistance uniformities especially for n-type layers are shown. Both AlGaN and GaInN with composition homogeneities of better than 1 nm photoluminescence peak-wavelength standard deviation are displayed. Finally, examination of optically pumped laser action in simple double-hetero structures is quoted to prove the quality of the material.

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