Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrate

1970 ◽  
Vol 8 (6) ◽  
pp. 377-379 ◽  
Author(s):  
A.Y. Cho ◽  
Y.S. Chen
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Calcium Fluoride ◽  
Gallium Phosphide

Epitaxial growth of gallium arsenide thin films by spray pyrolysis using a single-source organometallic precursor

1993 ◽  
Vol 131 (1-2) ◽  
pp. 176-180 ◽  
Author(s):  
Alex A. Wernberg ◽  
David J. Lawrence ◽  
Henry J. Gysling ◽  
Albert J. Filo ◽  
Thomas N. Blanton
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Spray Pyrolysis ◽  
Epitaxial Growth ◽  
Single Source ◽  
Organometallic Precursor

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth

Epitaxial growth and surface structure of cuprous halide thin films

2000 ◽  
Vol 18 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Tomoko Wake ◽  
Koichiro Saiki ◽  
Atsushi Koma
Keyword(s):  
Thin Films ◽  
Surface Structure ◽  
Epitaxial Growth

scholarly journals Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

1999 ◽  
Vol 85 (8) ◽  
pp. 4800-4802 ◽  
Author(s):  
J. Fontcuberta ◽  
M. Bibes ◽  
B. Martı́nez ◽  
V. Trtik ◽  
C. Ferrater ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition
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