ArF Excimer Laser-Induced Epitaxial Growth Of Gallium Arsenide Films

AbstractEpitaxial gallium arsenide films have been deposited on single crystalline GaAs substrates of {100} orientation and Si substrates of 3° off the {100} orientation by ArF excimer laser-induced metalorganic chemical vapor deposition. The important process parameters include the cleanliness of the substrate surface, substrate temperature, the composition, flow rate, and pressure of the reaction mixture, and the pulse energy and pulse rate of the laser. Particular attention was directed to the in-situ cleaning of the substrate surface prior to the deposition process. Homoepitaxial gallium arsenide films of good structural perfection have been deposited at 425°- 500 ° C and their single crystallinity has been confirmed by transmission electron microscopy. The carrier concentration decreases with increasing AsH3/(CH3)3 Ga molar ratio and with decreasing substrate temperature. Lower growth rate during the initial stage of deposition is necessary to obtain heteroepitaxial gallium arsenide films on Si with good structural perfection. The TEM examination of GaAs films of 0.15–0.2 µm thickness deposited on Si substrates at 500 °C has shown that stacking faults were present in the GaAs films; however, there is no apparent threading dislocations in the surface region of the thin GaAs film.

Download Full-text

Epitaxy of SiC Films on Sapphire by Laser CVD

MRS Proceedings ◽

10.1557/proc-97-189 ◽

1987 ◽

Vol 97 ◽

Cited By ~ 2

Author(s):

Hirohide Nakamatsu ◽

Shichio Kawai

Keyword(s):

Epitaxial Growth ◽

Excimer Laser ◽

Low Pressure ◽

Epitaxial Films ◽

Twin Structure ◽

Arf Excimer Laser ◽

Carrier Gases ◽

Laser Cvd ◽

Sic Films ◽

Peeling Off

ABSTRACTArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.

Download Full-text

Argon Ion and Excimer Laser Induced Epitaxy of GaP

MRS Proceedings ◽

10.1557/proc-129-177 ◽

1988 ◽

Vol 129 ◽

Author(s):

U. Sudarsan ◽

N. W. Cody ◽

T. Dosluoglu ◽

R. Solanki

Keyword(s):

Epitaxial Growth ◽

Excimer Laser ◽

Direct Write ◽

Argon Ion Laser ◽

Ion Laser ◽

Arf Excimer Laser ◽

Argon Ion ◽

Focused Beam

ABSTRACTLaser-induced epitaxial growth of GaP has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon ion laser operating at 514.5 nm was used to ‘direct-write’ epitaxial microstructures of GaP on silicon using a pyrolytic process. An ArF excimer laser has also been used to demonstrate homoepitaxy utilizing the photolytic process.

Download Full-text

Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth

Journal of Applied Physics ◽

10.1063/1.341717 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2087-2091 ◽

Cited By ~ 4

Author(s):

M. Ishida ◽

H. Tanaka ◽

K. Sawada ◽

A. Namiki ◽

T. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Excimer Laser ◽

Arf Excimer Laser

Download Full-text

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

MRS Proceedings ◽

10.1557/proc-451-521 ◽

1996 ◽

Vol 451 ◽

Cited By ~ 1

Author(s):

T. Shimizu ◽

M. Murahara

Keyword(s):

Contact Angle ◽

High Resolution ◽

Laser Beam ◽

Thin Layer ◽

Functional Groups ◽

Excimer Laser ◽

Laser Fluence ◽

Large Area ◽

Three Solutions ◽

Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Download Full-text

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19882995 ◽

1988 ◽

Vol 53 (12) ◽

pp. 2995-3013

Author(s):

Emerich Erdös ◽

Jindřich Leitner ◽

Petr Voňka ◽

Josef Stejskal ◽

Přemysl Klíma

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Epitaxial Growth ◽

Gas Phase ◽

Surface Reaction ◽

Quantitative Description ◽

The Other ◽

Rate Equations ◽

Impact Interaction ◽

Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

Download Full-text