We applied a picosecond transient grating technique for studies of nonequilibrium carrier
dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two
different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and
determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the
temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium
carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with
coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide
temperature range and attributed to recharging of defect states.
Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds