Longitudinally Localized Optical Carrier Injection for Femtosecond Transport Studies

1987 ◽  
pp. 86-88
Author(s):  
D. H. Reitze ◽  
T. R. Nuss ◽  
M. Downer
Keyword(s):  
Carrier Injection ◽  
Optical Carrier ◽  
Transport Studies

Electrical Transport Studies of the Hydrogen-Related Compensating Donor in B-Doped Silicon Diodes

1985 ◽  
Vol 59 ◽  
Author(s):  
A. J. Tavendale ◽  
A. A. Williams ◽  
D. Alexiev ◽  
S. J. Pearton
Keyword(s):  
Electrical Transport ◽  
Deep Level ◽  
Forward Bias ◽  
Carrier Injection ◽  
Transport Studies ◽  
Deuterium Substitution ◽  
Secondary Ion ◽  
Positively Charged ◽  
Donor Charge ◽  
Field Drift

ABSTRACTTransport of the hydrogen-related, acceptor-compensating defect has been observed in reverse-bias annealed Al-gate Schottky and n+-P diodes from hydrogenated, B-doped p-Si. Secondary ion mass spectroscopy (SIMS) profiling (deuterium substitution) confirmed field-aided migration. Significant differences in field transport (and thermal diffusion) between diodes from Hand D-treated p-Si(B) qualitatively indicates a monatomic species. The effect is interpreted as field drift of a positively charged species, possibly H+, with a donor charge state in the upper-half band gap, in conflict with long-held theory predicting very deep level activity. Acceptor compensation is unstable under minority (electron) carrier injection by forward bias or illumination at 25°C, supporting the acceptor-protonic trap pair model (A-H+) of Sah, Pan and Hsu [J. Appl. Phys. 57, 5148 (1985)].

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

2008 ◽  
Vol 600-603 ◽  
pp. 509-512 ◽  
Author(s):  
K. Neimontas ◽  
Kęstutis Jarašiūnas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
Gabriel Ferro
Keyword(s):  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Carrier Injection ◽  
Defect States ◽  
Optical Carrier ◽  
Temperature Range ◽  
All Optical ◽  
Bimolecular Recombination ◽  
Opposite Tendency

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.

Tuning a two-dimensional photonic crystal resonance via optical carrier injection

2005 ◽  
Vol 30 (1) ◽  
pp. 64 ◽  
Author(s):  
F. Raineri ◽  
C. Cojocaru ◽  
R. Raj ◽  
P. Monnier ◽  
A. Levenson ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Two Dimensional ◽  
Carrier Injection ◽  
Optical Carrier ◽  
Dimensional Photonic Crystal ◽  
Two Dimensional Photonic Crystal
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