A 1pJ/bit 10Gbps optical carrier-injection ring modulator and all-digital driver circuit in 45nm SOI

2015 ◽  
Author(s):  
Kanchan Gupta
Keyword(s):  
Carrier Injection ◽  
Optical Carrier ◽  
Ring Modulator ◽  
Driver Circuit

True Concurrent Modulation of a Multi-Channel Ring Modulator Transmitter Driven by a Comb Laser

2017 ◽  
Author(s):  
Ashkan Seyedi ◽  
Marco Fiorentino ◽  
Ray Beausoleil
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Carrier Injection ◽  
Channel Spacing ◽  
Ring Modulator ◽  
Ring Modulators

This paper presents experimental data of concurrent modulation of a multi-channel transmitter that uses carrier-injection ring modulators at 10Gb/s/channel that is optically driven by a quantum-dot comb laser with 50GHz channel spacing.

15 Gb/s Transmission with Wide-FSR Carrier Injection Ring Modulator for Tb/s Optical Links

2016 ◽  
Author(s):  
M. Ashkan Seyedi ◽  
Rui Wu ◽  
Chin-Hui Chen ◽  
Marco Fiorentino ◽  
Ray G. Beausoleil
Keyword(s):  
Carrier Injection ◽  
Optical Links ◽  
Ring Modulator

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

2008 ◽  
Vol 600-603 ◽  
pp. 509-512 ◽  
Author(s):  
K. Neimontas ◽  
Kęstutis Jarašiūnas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
Gabriel Ferro
Keyword(s):  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Carrier Injection ◽  
Defect States ◽  
Optical Carrier ◽  
Temperature Range ◽  
All Optical ◽  
Bimolecular Recombination ◽  
Opposite Tendency

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.

scholarly journals Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator

2015 ◽  
Vol 13 ◽  
pp. 121-125
Author(s):  
A. Fatemi ◽  
H. Gaul ◽  
U. Keil ◽  
H. Klar
Keyword(s):  
Supply Voltage ◽  
Optical Modulator ◽  
Current Application ◽  
Voltage Level ◽  
Electro Optic ◽  
Ring Modulator ◽  
Main Driver ◽  
Driver Circuit ◽  
Voltage Swing ◽  
Application Requirements

Abstract. This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified cascode topology and capacitance degeneration technique is employed to meet current application requirements; high voltage swing at high datarate. The simulation results show a differential output voltage swing of 3.9 Vp-p at 14 Gbps data rate, according to the FDR Infiniband standard.

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